Recent development of detectors with integrated capacitors and polysilicon resistors
A silicon microstrip detector has been developed with capacitive coupling of the diode strips to the metallization and with polysilicon bias resistors to each diode. It allows the decoupling of the leakage current from the input to the charge-sensitive amplifier. Results are given on the coupling ca...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1988-02, Vol.35 (1), p.428-431 |
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| container_end_page | 431 |
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| container_issue | 1 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 35 |
| creator | Evensen, L. Hansen, T.E. Horisberger, R. Hubbeling, L. Kaukouen, H. Maehlum, G. Piesert, A. Tuuva, T. Weilhammer, P. Zalewska, A. |
| description | A silicon microstrip detector has been developed with capacitive coupling of the diode strips to the metallization and with polysilicon bias resistors to each diode. It allows the decoupling of the leakage current from the input to the charge-sensitive amplifier. Results are given on the coupling capacity and the breakdown voltage as well as on the polysilicon line resistance. It is found that the coupling capacitance, varying between 25 pF and 80 pF as a function of the oxide thickness, is large enough to avoid capacitance signal losses to the backplane. The 200-nm-thick silicon oxide withstands a potential difference of 100 V or more, thus allowing the operation of the detector with the metal strips and backplane at a ground potential and the bias voltage applied to the diodes.< > |
| doi_str_mv | 10.1109/23.12758 |
| format | Article |
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It allows the decoupling of the leakage current from the input to the charge-sensitive amplifier. Results are given on the coupling capacity and the breakdown voltage as well as on the polysilicon line resistance. It is found that the coupling capacitance, varying between 25 pF and 80 pF as a function of the oxide thickness, is large enough to avoid capacitance signal losses to the backplane. The 200-nm-thick silicon oxide withstands a potential difference of 100 V or more, thus allowing the operation of the detector with the metal strips and backplane at a ground potential and the bias voltage applied to the diodes.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.12758</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Backplanes ; Capacitance ; Capacitors ; Detectors ; Diodes ; Metallization ; Microstrip ; Resistors ; Silicon ; Strips</subject><ispartof>IEEE transactions on nuclear science, 1988-02, Vol.35 (1), p.428-431</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-185d1e158a62f335d27a67c992f2be7c824d11e6e817cd74ba8a107df31078593</citedby><cites>FETCH-LOGICAL-c439t-185d1e158a62f335d27a67c992f2be7c824d11e6e817cd74ba8a107df31078593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/12758$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/12758$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Evensen, L.</creatorcontrib><creatorcontrib>Hansen, T.E.</creatorcontrib><creatorcontrib>Horisberger, R.</creatorcontrib><creatorcontrib>Hubbeling, L.</creatorcontrib><creatorcontrib>Kaukouen, H.</creatorcontrib><creatorcontrib>Maehlum, G.</creatorcontrib><creatorcontrib>Piesert, A.</creatorcontrib><creatorcontrib>Tuuva, T.</creatorcontrib><creatorcontrib>Weilhammer, P.</creatorcontrib><creatorcontrib>Zalewska, A.</creatorcontrib><title>Recent development of detectors with integrated capacitors and polysilicon resistors</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A silicon microstrip detector has been developed with capacitive coupling of the diode strips to the metallization and with polysilicon bias resistors to each diode. It allows the decoupling of the leakage current from the input to the charge-sensitive amplifier. Results are given on the coupling capacity and the breakdown voltage as well as on the polysilicon line resistance. It is found that the coupling capacitance, varying between 25 pF and 80 pF as a function of the oxide thickness, is large enough to avoid capacitance signal losses to the backplane. The 200-nm-thick silicon oxide withstands a potential difference of 100 V or more, thus allowing the operation of the detector with the metal strips and backplane at a ground potential and the bias voltage applied to the diodes.< ></description><subject>Backplanes</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Detectors</subject><subject>Diodes</subject><subject>Metallization</subject><subject>Microstrip</subject><subject>Resistors</subject><subject>Silicon</subject><subject>Strips</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqNkU1LAzEQhoMoWKvg1duexMvWTLLZJEcpfkFBED0vaTKrke1mTVLFf--2FTzqZWZenoe5vIScAp0BUH3J-AyYFGqPTEAIVYKQap9MKAVV6krrQ3KU0tsYK0HFhDw9osU-Fw4_sAvDanOHdowZbQ4xFZ8-vxa-z_gSTUZXWDMY67fI9K4YQveVfOdt6IuIyacNOSYHrekSnvzsKXm-uX6a35WLh9v7-dWitBXXuQQlHCAIZWrWci4ck6aWVmvWsiVKq1jlALBGBdI6WS2NMkCla_k4ldB8Ss53f4cY3teYcrPyyWLXmR7DOjVMC0VZVf8tKllzDuwfomBcUz6KFzvRxpBSxLYZol-Z-NUAbTZFNIw32yJG9WynekT81bbsG1_Sgwk</recordid><startdate>19880201</startdate><enddate>19880201</enddate><creator>Evensen, L.</creator><creator>Hansen, T.E.</creator><creator>Horisberger, R.</creator><creator>Hubbeling, L.</creator><creator>Kaukouen, H.</creator><creator>Maehlum, G.</creator><creator>Piesert, A.</creator><creator>Tuuva, T.</creator><creator>Weilhammer, P.</creator><creator>Zalewska, A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>8BQ</scope><scope>JG9</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>19880201</creationdate><title>Recent development of detectors with integrated capacitors and polysilicon resistors</title><author>Evensen, L. ; Hansen, T.E. ; Horisberger, R. ; Hubbeling, L. ; Kaukouen, H. ; Maehlum, G. ; Piesert, A. ; Tuuva, T. ; Weilhammer, P. ; Zalewska, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-185d1e158a62f335d27a67c992f2be7c824d11e6e817cd74ba8a107df31078593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Backplanes</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>Detectors</topic><topic>Diodes</topic><topic>Metallization</topic><topic>Microstrip</topic><topic>Resistors</topic><topic>Silicon</topic><topic>Strips</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Evensen, L.</creatorcontrib><creatorcontrib>Hansen, T.E.</creatorcontrib><creatorcontrib>Horisberger, R.</creatorcontrib><creatorcontrib>Hubbeling, L.</creatorcontrib><creatorcontrib>Kaukouen, H.</creatorcontrib><creatorcontrib>Maehlum, G.</creatorcontrib><creatorcontrib>Piesert, A.</creatorcontrib><creatorcontrib>Tuuva, T.</creatorcontrib><creatorcontrib>Weilhammer, P.</creatorcontrib><creatorcontrib>Zalewska, A.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Evensen, L.</au><au>Hansen, T.E.</au><au>Horisberger, R.</au><au>Hubbeling, L.</au><au>Kaukouen, H.</au><au>Maehlum, G.</au><au>Piesert, A.</au><au>Tuuva, T.</au><au>Weilhammer, P.</au><au>Zalewska, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Recent development of detectors with integrated capacitors and polysilicon resistors</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1988-02-01</date><risdate>1988</risdate><volume>35</volume><issue>1</issue><spage>428</spage><epage>431</epage><pages>428-431</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A silicon microstrip detector has been developed with capacitive coupling of the diode strips to the metallization and with polysilicon bias resistors to each diode. It allows the decoupling of the leakage current from the input to the charge-sensitive amplifier. Results are given on the coupling capacity and the breakdown voltage as well as on the polysilicon line resistance. It is found that the coupling capacitance, varying between 25 pF and 80 pF as a function of the oxide thickness, is large enough to avoid capacitance signal losses to the backplane. The 200-nm-thick silicon oxide withstands a potential difference of 100 V or more, thus allowing the operation of the detector with the metal strips and backplane at a ground potential and the bias voltage applied to the diodes.< ></abstract><pub>IEEE</pub><doi>10.1109/23.12758</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1988-02, Vol.35 (1), p.428-431 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28523903 |
| source | IEEE Electronic Library (IEL) |
| subjects | Backplanes Capacitance Capacitors Detectors Diodes Metallization Microstrip Resistors Silicon Strips |
| title | Recent development of detectors with integrated capacitors and polysilicon resistors |
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