A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure
This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 μm. A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral g...
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| Veröffentlicht in: | IEEE electron device letters 2002-06, Vol.23 (6), p.315-317 |
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| container_issue | 6 |
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| container_title | IEEE electron device letters |
| container_volume | 23 |
| creator | Kim, Cheon-Hong Song, In-Hyuk Nam, Woo-Jin Han, Min-Koo |
| description | This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 μm. A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 μm-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm 2 /Vsec was obtained due to. the high-quality grain structure. |
| doi_str_mv | 10.1109/LED.2002.1004220 |
| format | Article |
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A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 μm-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm 2 /Vsec was obtained due to. the high-quality grain structure.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2002.1004220</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Air gaps ; Annealing ; Excimer lasers ; Flint ; Floating structures ; Grain size ; Grain structure ; Grains ; Laser sintering ; Semiconductor devices ; Semiconductor films ; Silicon ; Substrates ; Temperature ; Thermal conductivity ; Thin film transistors</subject><ispartof>IEEE electron device letters, 2002-06, Vol.23 (6), p.315-317</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c479t-8634633c1d22862704b4be14018428668118f342eabebba980b0f4c7ea2664623</citedby><cites>FETCH-LOGICAL-c479t-8634633c1d22862704b4be14018428668118f342eabebba980b0f4c7ea2664623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1004220$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1004220$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Cheon-Hong</creatorcontrib><creatorcontrib>Song, In-Hyuk</creatorcontrib><creatorcontrib>Nam, Woo-Jin</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><title>A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 μm. A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 μm-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm 2 /Vsec was obtained due to. the high-quality grain structure.</description><subject>Air gaps</subject><subject>Annealing</subject><subject>Excimer lasers</subject><subject>Flint</subject><subject>Floating structures</subject><subject>Grain size</subject><subject>Grain structure</subject><subject>Grains</subject><subject>Laser sintering</subject><subject>Semiconductor devices</subject><subject>Semiconductor films</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thin film transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0c9rHCEUB3AJDWSb9l7oRXJoT7N9Om_8cQz50RYWcsgGchPHvCmG2Z2tzoRs__q42RxKD0lFVPTzBP0y9knAXAiw3xYX53MJIOcCAKWEAzYTTWMqaFT9js1Ao6hqAeqIvc_5HkAgapyx21O-GfptdR358nLJO9-mGPxId7zdcnoMcUWJ9z6XMVFI2zz6vo9__BiHNS-964eyXv_iPozxgXge0xTGKdEHdtj5PtPHl_mY3VxeLM9-VIur7z_PThdVQG3HyqgaVV0HcSelUVIDttiSQBAGy4YyQpiuRkm-pbb11kALHQZNXiqFStbH7Ov-3k0afk-UR7eKOVDf-zUNU3YWtG2kRVPkl1elNNYaUcN_wEaWhm9DrRrURhd48g-8H6a0Lv_irN09s3lGsEchDTkn6twmxZVPWyfA7TJ2JWO3y9i9ZFxKPu9LIhH9xfenT9V6n98</recordid><startdate>20020601</startdate><enddate>20020601</enddate><creator>Kim, Cheon-Hong</creator><creator>Song, In-Hyuk</creator><creator>Nam, Woo-Jin</creator><creator>Han, Min-Koo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 μm-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm 2 /Vsec was obtained due to. the high-quality grain structure.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2002.1004220</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2002-06, Vol.23 (6), p.315-317 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Air gaps Annealing Excimer lasers Flint Floating structures Grain size Grain structure Grains Laser sintering Semiconductor devices Semiconductor films Silicon Substrates Temperature Thermal conductivity Thin film transistors |
| title | A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure |
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