Performance of power FET's fabricated on MBE-Grown GaAs layers

Power GaAs FET's of various sizes have been fabricated using MBE material containing a 1 µm-thick semi-insulating buffer layer. These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 1...

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Veröffentlicht in:	IEEE electron device letters 1982-10, Vol.3 (10), p.320-321
Hauptverfasser:	Hwang, J.C.M., Flahive, P.G., Wemple, S.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	FETs Fingers Frequency Gain Gallium arsenide Microwave devices Microwave measurements Power generation Tuners Tuning
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