Performance of power FET's fabricated on MBE-Grown GaAs layers
Power GaAs FET's of various sizes have been fabricated using MBE material containing a 1 µm-thick semi-insulating buffer layer. These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 1...
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| Veröffentlicht in: | IEEE electron device letters 1982-10, Vol.3 (10), p.320-321 |
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| container_end_page | 321 |
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| container_issue | 10 |
| container_start_page | 320 |
| container_title | IEEE electron device letters |
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| creator | Hwang, J.C.M. Flahive, P.G. Wemple, S.H. |
| description | Power GaAs FET's of various sizes have been fabricated using MBE material containing a 1 µm-thick semi-insulating buffer layer. These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 10.9 dB associated gain at 6.4 GHz, a power-added efficiency of 42.6% with 1.4 W output power and 6.4 dB associated gain at 8 GHz. The results confirm the capability of MBE for producing high quality material with a sharp active layer/buffer interface. |
| doi_str_mv | 10.1109/EDL.1982.25584 |
| format | Article |
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These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 10.9 dB associated gain at 6.4 GHz, a power-added efficiency of 42.6% with 1.4 W output power and 6.4 dB associated gain at 8 GHz. 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These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 10.9 dB associated gain at 6.4 GHz, a power-added efficiency of 42.6% with 1.4 W output power and 6.4 dB associated gain at 8 GHz. The results confirm the capability of MBE for producing high quality material with a sharp active layer/buffer interface.</description><subject>FETs</subject><subject>Fingers</subject><subject>Frequency</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Microwave devices</subject><subject>Microwave measurements</subject><subject>Power generation</subject><subject>Tuners</subject><subject>Tuning</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAURS0EEqWwsrBkginBzx-JvSCVUgpSEQwwW47zLAWlcbFbVf33pBSJkeku59zhEHIJtACg-nb2sChAK1YwKZU4IiMYNqey5MdkRCsBOQdanpKzlD4pBSEqMSJ3bxh9iEvbO8yCz1ZhizF7nL3fpMzbOrbOrrHJQp-93M_yeQzbPpvbSco6u8OYzsmJt13Ci98dk4_BnT7li9f583SyyB1Xcp1b1kjrvK-YQ1HVGljtlASruColE7qxApV0rMHacyjBew2oqlpqa6uSCT4m14ffVQxfG0xrs2yTw66zPYZNMkxJRkHD_yCXTAutBrA4gC6GlCJ6s4rt0sadAWr2Pc3Q0-x7mp-eg3B1EFpE_IOFYqXS_BvaGm84</recordid><startdate>19821001</startdate><enddate>19821001</enddate><creator>Hwang, J.C.M.</creator><creator>Flahive, P.G.</creator><creator>Wemple, S.H.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19821001</creationdate><title>Performance of power FET's fabricated on MBE-Grown GaAs layers</title><author>Hwang, J.C.M. ; Flahive, P.G. ; Wemple, S.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-a2d5acff72ce47b912bc851a83865249da4e85c2debf3161ff91e87b59aa76243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>FETs</topic><topic>Fingers</topic><topic>Frequency</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Microwave devices</topic><topic>Microwave measurements</topic><topic>Power generation</topic><topic>Tuners</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hwang, J.C.M.</creatorcontrib><creatorcontrib>Flahive, P.G.</creatorcontrib><creatorcontrib>Wemple, S.H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hwang, J.C.M.</au><au>Flahive, P.G.</au><au>Wemple, S.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of power FET's fabricated on MBE-Grown GaAs layers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1982-10-01</date><risdate>1982</risdate><volume>3</volume><issue>10</issue><spage>320</spage><epage>321</epage><pages>320-321</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Power GaAs FET's of various sizes have been fabricated using MBE material containing a 1 µm-thick semi-insulating buffer layer. These devices, when operated between 6 and 12 GHz, exhibited state-of-the-art microwave performance. For example, the 3 mm devices gave an output power of 1.5 W with 10.9 dB associated gain at 6.4 GHz, a power-added efficiency of 42.6% with 1.4 W output power and 6.4 dB associated gain at 8 GHz. The results confirm the capability of MBE for producing high quality material with a sharp active layer/buffer interface.</abstract><pub>IEEE</pub><doi>10.1109/EDL.1982.25584</doi><tpages>2</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1982-10, Vol.3 (10), p.320-321 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28520191 |
| source | IEEE Electronic Library (IEL) |
| subjects | FETs Fingers Frequency Gain Gallium arsenide Microwave devices Microwave measurements Power generation Tuners Tuning |
| title | Performance of power FET's fabricated on MBE-Grown GaAs layers |
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