Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures
A novel, resistance-based porous silicon sensor with Pd nano-structures as hydrogen sensing layer is presented. The sensor operates at room temperature. p-Type Si substrate is subjected to porous Si etching. The substrate is then coated with a thin layer of Pd and annealed at 900 °C. This results in...
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| Veröffentlicht in: | Sensors and actuators. B, Chemical Chemical, 2005-11, Vol.111 (Complete), p.125-129 |
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| container_title | Sensors and actuators. B, Chemical |
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| creator | Luongo, Kevin Sine, Altagrace Bhansali, Shekhar |
| description | A novel, resistance-based porous silicon sensor with Pd nano-structures as hydrogen sensing layer is presented. The sensor operates at room temperature. p-Type Si substrate is subjected to porous Si etching. The substrate is then coated with a thin layer of Pd and annealed at 900
°C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor was tested in the range of 0–1.5% hydrogen. The sensor responded in real time. Unlike conventional thin film-based resistive hydrogen sensors this sensor showed an inverse relationship between increased hydrogen concentration versus resistance. The mechanism driving the changed output is discussed. |
| doi_str_mv | 10.1016/j.snb.2005.06.056 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28516296</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925400505005940</els_id><sourcerecordid>28516296</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-cd46b0b8ddec540eb1f8ee42e89353d281973a7994cf2333243814b18c69e9b93</originalsourceid><addsrcrecordid>eNp9kLFu2zAQhomiAeomfYBunIIsUo-kRJHIFKRJWyBACyRZshASebJpyKRLSgb89mHqzpluuO__cfcR8pVBzYDJb9s6h6HmAG0NsoZWfiArpjpRCei6j2QFmrdVU9afyOectwDQCAkr8vIdDzjF_Q7DTONIe7rx6810pBlD9rM_IN3HFJdMH3019Bkd3RxdimsM_5CY6JJ9WNM_joY-xCrPabHzkjBfkLOxnzJ--T_PyfP93dPtz-rh949ftzcPlRWSzZV1jRxgUM6hbRvAgY0KseGotGiF44rpTvSd1o0duRCCN0KxZmDKSo160OKcXJ569yn-XTDPZuezxWnqA5bDDVctk1zLAl69CzJQnGneASsoO6E2xZwTjmaf_K5PxwKZN-Fma4pw8ybcgDRFeMlcnzJYnj14TCZbj8Gi8wntbFz076RfAcfaiSE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1082192701</pqid></control><display><type>article</type><title>Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Luongo, Kevin ; Sine, Altagrace ; Bhansali, Shekhar</creator><creatorcontrib>Luongo, Kevin ; Sine, Altagrace ; Bhansali, Shekhar</creatorcontrib><description>A novel, resistance-based porous silicon sensor with Pd nano-structures as hydrogen sensing layer is presented. The sensor operates at room temperature. p-Type Si substrate is subjected to porous Si etching. The substrate is then coated with a thin layer of Pd and annealed at 900
°C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor was tested in the range of 0–1.5% hydrogen. The sensor responded in real time. Unlike conventional thin film-based resistive hydrogen sensors this sensor showed an inverse relationship between increased hydrogen concentration versus resistance. The mechanism driving the changed output is discussed.</description><identifier>ISSN: 0925-4005</identifier><identifier>EISSN: 1873-3077</identifier><identifier>DOI: 10.1016/j.snb.2005.06.056</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Actuators ; Gas sensor ; Impedance ; Nanocomposites ; Nanomaterials ; Nanostructure ; Palladium ; PD nanoparticles ; Porous Si ; Sensors ; Silicon substrates ; Thin films</subject><ispartof>Sensors and actuators. B, Chemical, 2005-11, Vol.111 (Complete), p.125-129</ispartof><rights>2005 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-cd46b0b8ddec540eb1f8ee42e89353d281973a7994cf2333243814b18c69e9b93</citedby><cites>FETCH-LOGICAL-c361t-cd46b0b8ddec540eb1f8ee42e89353d281973a7994cf2333243814b18c69e9b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.snb.2005.06.056$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Luongo, Kevin</creatorcontrib><creatorcontrib>Sine, Altagrace</creatorcontrib><creatorcontrib>Bhansali, Shekhar</creatorcontrib><title>Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures</title><title>Sensors and actuators. B, Chemical</title><description>A novel, resistance-based porous silicon sensor with Pd nano-structures as hydrogen sensing layer is presented. The sensor operates at room temperature. p-Type Si substrate is subjected to porous Si etching. The substrate is then coated with a thin layer of Pd and annealed at 900
°C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor was tested in the range of 0–1.5% hydrogen. The sensor responded in real time. Unlike conventional thin film-based resistive hydrogen sensors this sensor showed an inverse relationship between increased hydrogen concentration versus resistance. The mechanism driving the changed output is discussed.</description><subject>Actuators</subject><subject>Gas sensor</subject><subject>Impedance</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Palladium</subject><subject>PD nanoparticles</subject><subject>Porous Si</subject><subject>Sensors</subject><subject>Silicon substrates</subject><subject>Thin films</subject><issn>0925-4005</issn><issn>1873-3077</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kLFu2zAQhomiAeomfYBunIIsUo-kRJHIFKRJWyBACyRZshASebJpyKRLSgb89mHqzpluuO__cfcR8pVBzYDJb9s6h6HmAG0NsoZWfiArpjpRCei6j2QFmrdVU9afyOectwDQCAkr8vIdDzjF_Q7DTONIe7rx6810pBlD9rM_IN3HFJdMH3019Bkd3RxdimsM_5CY6JJ9WNM_joY-xCrPabHzkjBfkLOxnzJ--T_PyfP93dPtz-rh949ftzcPlRWSzZV1jRxgUM6hbRvAgY0KseGotGiF44rpTvSd1o0duRCCN0KxZmDKSo160OKcXJ569yn-XTDPZuezxWnqA5bDDVctk1zLAl69CzJQnGneASsoO6E2xZwTjmaf_K5PxwKZN-Fma4pw8ybcgDRFeMlcnzJYnj14TCZbj8Gi8wntbFz076RfAcfaiSE</recordid><startdate>20051111</startdate><enddate>20051111</enddate><creator>Luongo, Kevin</creator><creator>Sine, Altagrace</creator><creator>Bhansali, Shekhar</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7SP</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20051111</creationdate><title>Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures</title><author>Luongo, Kevin ; Sine, Altagrace ; Bhansali, Shekhar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-cd46b0b8ddec540eb1f8ee42e89353d281973a7994cf2333243814b18c69e9b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Actuators</topic><topic>Gas sensor</topic><topic>Impedance</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Palladium</topic><topic>PD nanoparticles</topic><topic>Porous Si</topic><topic>Sensors</topic><topic>Silicon substrates</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luongo, Kevin</creatorcontrib><creatorcontrib>Sine, Altagrace</creatorcontrib><creatorcontrib>Bhansali, Shekhar</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Sensors and actuators. B, Chemical</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luongo, Kevin</au><au>Sine, Altagrace</au><au>Bhansali, Shekhar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures</atitle><jtitle>Sensors and actuators. B, Chemical</jtitle><date>2005-11-11</date><risdate>2005</risdate><volume>111</volume><issue>Complete</issue><spage>125</spage><epage>129</epage><pages>125-129</pages><issn>0925-4005</issn><eissn>1873-3077</eissn><abstract>A novel, resistance-based porous silicon sensor with Pd nano-structures as hydrogen sensing layer is presented. The sensor operates at room temperature. p-Type Si substrate is subjected to porous Si etching. The substrate is then coated with a thin layer of Pd and annealed at 900
°C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor was tested in the range of 0–1.5% hydrogen. The sensor responded in real time. Unlike conventional thin film-based resistive hydrogen sensors this sensor showed an inverse relationship between increased hydrogen concentration versus resistance. The mechanism driving the changed output is discussed.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.snb.2005.06.056</doi><tpages>5</tpages></addata></record> |
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| ispartof | Sensors and actuators. B, Chemical, 2005-11, Vol.111 (Complete), p.125-129 |
| issn | 0925-4005 1873-3077 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28516296 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Actuators Gas sensor Impedance Nanocomposites Nanomaterials Nanostructure Palladium PD nanoparticles Porous Si Sensors Silicon substrates Thin films |
| title | Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T05%3A36%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Development%20of%20a%20highly%20sensitive%20porous%20Si-based%20hydrogen%20sensor%20using%20Pd%20nano-structures&rft.jtitle=Sensors%20and%20actuators.%20B,%20Chemical&rft.au=Luongo,%20Kevin&rft.date=2005-11-11&rft.volume=111&rft.issue=Complete&rft.spage=125&rft.epage=129&rft.pages=125-129&rft.issn=0925-4005&rft.eissn=1873-3077&rft_id=info:doi/10.1016/j.snb.2005.06.056&rft_dat=%3Cproquest_cross%3E28516296%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1082192701&rft_id=info:pmid/&rft_els_id=S0925400505005940&rfr_iscdi=true |