Ionizing radiation induced leakage current on ultra-thin gate oxides
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to /spl gamma/ radiation from a Co/sup 60/ source. As a result, we have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1997-12, Vol.44 (6), p.1818-1825 |
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| container_end_page | 1825 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 44 |
| creator | Scarpa, A. Paccagnella, A. Montera, F. Ghibaudo, G. Pananakakis, G. Ghidini, G. Fuochi, P.G. |
| description | MOS capacitors with a 4.4 nm thick gate oxide have been exposed to /spl gamma/ radiation from a Co/sup 60/ source. As a result, we have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. We have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. We have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer. |
| doi_str_mv | 10.1109/23.658948 |
| format | Article |
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As a result, we have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. We have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. We have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.658948</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Current measurement ; GAMMA RADIATION ; INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS ; Ionizing radiation ; LEAKAGE CURRENT ; Microelectronics ; MOS capacitors ; MOS devices ; Oxidation ; PHYSICAL RADIATION EFFECTS ; RADIATION DOSES ; SEMICONDUCTOR DEVICES ; Stress ; Substrates ; TRAPS ; Tunneling</subject><ispartof>IEEE Transactions on Nuclear Science, 1997-12, Vol.44 (6), p.1818-1825</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-cdbd9b16f11ce02230258c9045af76e952c5ad8abc2c3977abcc38424832be53</citedby><cites>FETCH-LOGICAL-c369t-cdbd9b16f11ce02230258c9045af76e952c5ad8abc2c3977abcc38424832be53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/658948$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,887,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/658948$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/644176$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Scarpa, A.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><creatorcontrib>Montera, F.</creatorcontrib><creatorcontrib>Ghibaudo, G.</creatorcontrib><creatorcontrib>Pananakakis, G.</creatorcontrib><creatorcontrib>Ghidini, G.</creatorcontrib><creatorcontrib>Fuochi, P.G.</creatorcontrib><title>Ionizing radiation induced leakage current on ultra-thin gate oxides</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>MOS capacitors with a 4.4 nm thick gate oxide have been exposed to /spl gamma/ radiation from a Co/sup 60/ source. As a result, we have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. We have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. We have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.</description><subject>Current measurement</subject><subject>GAMMA RADIATION</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Ionizing radiation</subject><subject>LEAKAGE CURRENT</subject><subject>Microelectronics</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>Oxidation</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>RADIATION DOSES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Stress</subject><subject>Substrates</subject><subject>TRAPS</subject><subject>Tunneling</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo90D1PwzAQBmALgUQpDKxMYUFiSPFnYo-Iz0qVWLpbjnNpDaldbEcCfj1BqZjuTu-jG16ELgleEILVHWWLSkjF5RGaESFkSUQtj9EMYyJLxZU6RWcpvY8nF1jM0OMyePfj_KaIpnUmu-AL59vBQlv0YD7MBgo7xAg-F2M09DmaMm-dLzYmQxG-XAvpHJ10pk9wcZhztH5-Wj-8lqu3l-XD_aq0rFK5tG3TqoZUHSEWMKUMUyGtwlyYrq5ACWqFaaVpLLVM1fW4WCY55ZLRBgSbo-vpbUjZ6WRdBru1wXuwWVeck7oazc1k9jF8DpCy3rlkoe-NhzAkTaXANSN8hLcTtDGkFKHT--h2Jn5rgvVflZoyPVU52qvJOgD4d4fwF6dubh8</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Scarpa, A.</creator><creator>Paccagnella, A.</creator><creator>Montera, F.</creator><creator>Ghibaudo, G.</creator><creator>Pananakakis, G.</creator><creator>Ghidini, G.</creator><creator>Fuochi, P.G.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19971201</creationdate><title>Ionizing radiation induced leakage current on ultra-thin gate oxides</title><author>Scarpa, A. ; Paccagnella, A. ; Montera, F. ; Ghibaudo, G. ; Pananakakis, G. ; Ghidini, G. ; Fuochi, P.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-cdbd9b16f11ce02230258c9045af76e952c5ad8abc2c3977abcc38424832be53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Current measurement</topic><topic>GAMMA RADIATION</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Ionizing radiation</topic><topic>LEAKAGE CURRENT</topic><topic>Microelectronics</topic><topic>MOS capacitors</topic><topic>MOS devices</topic><topic>Oxidation</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>RADIATION DOSES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Stress</topic><topic>Substrates</topic><topic>TRAPS</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Scarpa, A.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><creatorcontrib>Montera, F.</creatorcontrib><creatorcontrib>Ghibaudo, G.</creatorcontrib><creatorcontrib>Pananakakis, G.</creatorcontrib><creatorcontrib>Ghidini, G.</creatorcontrib><creatorcontrib>Fuochi, P.G.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Scarpa, A.</au><au>Paccagnella, A.</au><au>Montera, F.</au><au>Ghibaudo, G.</au><au>Pananakakis, G.</au><au>Ghidini, G.</au><au>Fuochi, P.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ionizing radiation induced leakage current on ultra-thin gate oxides</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1997-12-01</date><risdate>1997</risdate><volume>44</volume><issue>6</issue><spage>1818</spage><epage>1825</epage><pages>1818-1825</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>MOS capacitors with a 4.4 nm thick gate oxide have been exposed to /spl gamma/ radiation from a Co/sup 60/ source. As a result, we have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. We have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. We have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.658948</doi><tpages>8</tpages></addata></record> |
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| issn | 0018-9499 1558-1578 |
| language | eng |
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| subjects | Current measurement GAMMA RADIATION INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Ionizing radiation LEAKAGE CURRENT Microelectronics MOS capacitors MOS devices Oxidation PHYSICAL RADIATION EFFECTS RADIATION DOSES SEMICONDUCTOR DEVICES Stress Substrates TRAPS Tunneling |
| title | Ionizing radiation induced leakage current on ultra-thin gate oxides |
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