Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction
An undulator beamline equipped with a UHV-scanning tunneling electron microscopy (STM) system has been designed and constructed at the UVSOR facility to investigate synchrotron-radiation-stimulated reactions. Using this undulator beamline, we have observed irradiation effects on the hydrogen termina...
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| Veröffentlicht in: | Journal of electron spectroscopy and related phenomena 2005-06, Vol.144 (Complete), p.1113-1116 |
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| container_title | Journal of electron spectroscopy and related phenomena |
| container_volume | 144 |
| creator | Nonogaki, Y. Katoh, M. Matsushita, K. Suzui, M. Urisu, T. |
| description | An undulator beamline equipped with a UHV-scanning tunneling electron microscopy (STM) system has been designed and constructed at the UVSOR facility to investigate synchrotron-radiation-stimulated reactions. Using this undulator beamline, we have observed irradiation effects on the hydrogen terminated-(H-) Si(1
1
1) surfaces in atomic scale. The small protrusions, which are assigned to the rest-atom with missing H, appeared on the monohydride surface after irradiation. The density of them monotonically increased with irradiation dose. This phenomenon has been observed almost independent on the Si 2p core electron excitation threshold, indicating the significant contribution of the valence electron excitations to the Si
H bond dissociations |
| doi_str_mv | 10.1016/j.elspec.2005.01.090 |
| format | Article |
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1
1) surfaces in atomic scale. The small protrusions, which are assigned to the rest-atom with missing H, appeared on the monohydride surface after irradiation. The density of them monotonically increased with irradiation dose. This phenomenon has been observed almost independent on the Si 2p core electron excitation threshold, indicating the significant contribution of the valence electron excitations to the Si
H bond dissociations</description><identifier>ISSN: 0368-2048</identifier><identifier>EISSN: 1873-2526</identifier><identifier>DOI: 10.1016/j.elspec.2005.01.090</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>H-Si ; SR-stimulated reaction ; UHV-STM ; Undulator radiation</subject><ispartof>Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144 (Complete), p.1113-1116</ispartof><rights>2005 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-f6cd6d1305c6266ac21214a8d56c5f222c9ef693222d12cc398a4f8092d4b3b53</citedby><cites>FETCH-LOGICAL-c337t-f6cd6d1305c6266ac21214a8d56c5f222c9ef693222d12cc398a4f8092d4b3b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.elspec.2005.01.090$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Nonogaki, Y.</creatorcontrib><creatorcontrib>Katoh, M.</creatorcontrib><creatorcontrib>Matsushita, K.</creatorcontrib><creatorcontrib>Suzui, M.</creatorcontrib><creatorcontrib>Urisu, T.</creatorcontrib><title>Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction</title><title>Journal of electron spectroscopy and related phenomena</title><description>An undulator beamline equipped with a UHV-scanning tunneling electron microscopy (STM) system has been designed and constructed at the UVSOR facility to investigate synchrotron-radiation-stimulated reactions. Using this undulator beamline, we have observed irradiation effects on the hydrogen terminated-(H-) Si(1
1
1) surfaces in atomic scale. The small protrusions, which are assigned to the rest-atom with missing H, appeared on the monohydride surface after irradiation. The density of them monotonically increased with irradiation dose. This phenomenon has been observed almost independent on the Si 2p core electron excitation threshold, indicating the significant contribution of the valence electron excitations to the Si
H bond dissociations</description><subject>H-Si</subject><subject>SR-stimulated reaction</subject><subject>UHV-STM</subject><subject>Undulator radiation</subject><issn>0368-2048</issn><issn>1873-2526</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kMFu1DAQhq2KSiyFN-DgE7eEsZ14k0sltIIWqYgDLVfLOx5rvcrGqe0U9d4HJ-ly5jQjzf9_I32MfRRQCxD687GmIU-EtQRoaxA19HDBNqLbqkq2Ur9hG1C6qyQ03Vv2LucjAGxbJTfsZRfHXNKMJcSRR8_Lgfg8unmwJSa-J3sawkicHucwTeT4n1AO3PKH29_Vr_sf3C-huM-UnuxKyCsiP494SLGkOFbJuvB6qXIJp5W6MPKcvEXiiezr3_fs0tsh04d_84o9fPt6v7ut7n7efN99uatQqW2pvEannVDQopZaW5RCisZ2rtXYeikl9uR1r5bNCYmo-s42voNeumav9q26Yp_O3CnFx5lyMaeQkYbBjhTnbGTX9H0P2yXYnIOYYs6JvJlSONn0bASYVbk5mrNysyo3IMyifKldn2vLjZ4CJZMx0IjkQiIsxsXwf8BfshGPLQ</recordid><startdate>20050601</startdate><enddate>20050601</enddate><creator>Nonogaki, Y.</creator><creator>Katoh, M.</creator><creator>Matsushita, K.</creator><creator>Suzui, M.</creator><creator>Urisu, T.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050601</creationdate><title>Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction</title><author>Nonogaki, Y. ; Katoh, M. ; Matsushita, K. ; Suzui, M. ; Urisu, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-f6cd6d1305c6266ac21214a8d56c5f222c9ef693222d12cc398a4f8092d4b3b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>H-Si</topic><topic>SR-stimulated reaction</topic><topic>UHV-STM</topic><topic>Undulator radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nonogaki, Y.</creatorcontrib><creatorcontrib>Katoh, M.</creatorcontrib><creatorcontrib>Matsushita, K.</creatorcontrib><creatorcontrib>Suzui, M.</creatorcontrib><creatorcontrib>Urisu, T.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electron spectroscopy and related phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nonogaki, Y.</au><au>Katoh, M.</au><au>Matsushita, K.</au><au>Suzui, M.</au><au>Urisu, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction</atitle><jtitle>Journal of electron spectroscopy and related phenomena</jtitle><date>2005-06-01</date><risdate>2005</risdate><volume>144</volume><issue>Complete</issue><spage>1113</spage><epage>1116</epage><pages>1113-1116</pages><issn>0368-2048</issn><eissn>1873-2526</eissn><abstract>An undulator beamline equipped with a UHV-scanning tunneling electron microscopy (STM) system has been designed and constructed at the UVSOR facility to investigate synchrotron-radiation-stimulated reactions. Using this undulator beamline, we have observed irradiation effects on the hydrogen terminated-(H-) Si(1
1
1) surfaces in atomic scale. The small protrusions, which are assigned to the rest-atom with missing H, appeared on the monohydride surface after irradiation. The density of them monotonically increased with irradiation dose. This phenomenon has been observed almost independent on the Si 2p core electron excitation threshold, indicating the significant contribution of the valence electron excitations to the Si
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| ispartof | Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144 (Complete), p.1113-1116 |
| issn | 0368-2048 1873-2526 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | H-Si SR-stimulated reaction UHV-STM Undulator radiation |
| title | Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction |
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