ZnO:Ga Thin Films Produced by RF Sputtering at Room Temperature: Effect of the Power Density

Ga-doped polycrystalline zinc oxide (GZO) thin films have been deposited at high growth rates by rf magnetron sputtering. The dependence of electrical, optical and morphological properties on the rf power density were investigated. The lowest resistivity of 1.9 x 10-4 *Wcm was obtained for a rf powe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2004-01, Vol.455-456, p.12-15
Hauptverfasser:	Braz Fernandes, Francisco Manuel, Assunção, V., Marques, António, Gonçalves, Alexandra, Fortunato, Elvira, Martins, Rodrigo, Pereira, Luís, Ferreira, Isabel, Silva, Rui Jorge C., Águas, Hugo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!