Neutron induced single-word multiple-bit upset in SRAM

The single-word multiple-bit upset (SMU) frequency for nine commercial static random access memories (SRAM) have been evaluated at eight different neutron energies; 0-11 MeV, 14 MeV, 22 MeV, 35 MeV, 45 MeV, 75 MeV, 96 MeV, 160 MeV. The SRAM types used at these experiments have sizes from 256 Kbit up...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nuclear science 1999-12, Vol.46 (6), p.1427-1433
Hauptverfasser:	Johansson, K., Ohlsson, M., Olsson, N., Blomgren, J., Renberg, P.-U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aircraft Atmosphere Devices ELECTRIC POTENTIAL Energy (nuclear) ENERGY DEPENDENCE Error correction FAILURES Frequency INSTRUMENTATION Irradiation Laboratories MEV RANGE NEUTRONS PHYSICAL RADIATION EFFECTS Random access memory SEMICONDUCTOR STORAGE DEVICES Single event upset Static random access memory Testing Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!