Defect structure of InAlAs/InP layers

In x Al 1 − x As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2 μm thick In x Al 1 − x As (0.50 ≤ x ≤ 0.53) layers were grown on the (0 0 1) oriented InP substrates by molecul...

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Bibliographische Detailangaben

Veröffentlicht in:	Journal of alloys and compounds 2005-09, Vol.401 (1), p.221-225
Hauptverfasser:	Shalimov, A., Bak-Misiuk, J., Kaniewski, J., Trela, J., Wierzchowski, W., Wieteska, K., Graeff, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition defects and impurities Condensed matter: structure, mechanical and thermal properties Defects Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin layer X-ray diffraction
Online-Zugang:	Volltext
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