Defect structure of InAlAs/InP layers
In x Al 1 − x As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2 μm thick In x Al 1 − x As (0.50 ≤ x ≤ 0.53) layers were grown on the (0 0 1) oriented InP substrates by molecul...
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| Veröffentlicht in: | Journal of alloys and compounds 2005-09, Vol.401 (1), p.221-225 |
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| container_title | Journal of alloys and compounds |
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| creator | Shalimov, A. Bak-Misiuk, J. Kaniewski, J. Trela, J. Wierzchowski, W. Wieteska, K. Graeff, W. |
| description | In
x
Al
1
−
x
As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2
μm thick In
x
Al
1
−
x
As (0.50
≤
x
≤
0.53) layers were grown on the (0
0
1) oriented InP substrates by molecular beam epitaxy (MBE). They were investigated using X-ray diffraction and chemical etching. X-ray studies were performed applying high-resolution diffractometry in the double (DAD) and triple (TAD) axis configuration. It was found that the In
0.53Al
0.47As/InP layer under compressive strain relaxes partially along two 〈1
1
0〉 directions. On the other hand, the In
0.50Al
0.50As/InP layers, being under tensile strain, consist of two sub-layers; the first one, adjacent to the substrate is pseudomorphic whereas the upper sub-layer is partially relaxed and the relaxation is anisotropic. The upper sub-layer is fully strained in the [1
1
0] direction while partially relaxed in the [−1
1
0] one. |
| doi_str_mv | 10.1016/j.jallcom.2005.02.054 |
| format | Article |
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x
Al
1
−
x
As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2
μm thick In
x
Al
1
−
x
As (0.50
≤
x
≤
0.53) layers were grown on the (0
0
1) oriented InP substrates by molecular beam epitaxy (MBE). They were investigated using X-ray diffraction and chemical etching. X-ray studies were performed applying high-resolution diffractometry in the double (DAD) and triple (TAD) axis configuration. It was found that the In
0.53Al
0.47As/InP layer under compressive strain relaxes partially along two 〈1
1
0〉 directions. On the other hand, the In
0.50Al
0.50As/InP layers, being under tensile strain, consist of two sub-layers; the first one, adjacent to the substrate is pseudomorphic whereas the upper sub-layer is partially relaxed and the relaxation is anisotropic. The upper sub-layer is fully strained in the [1
1
0] direction while partially relaxed in the [−1
1
0] one.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2005.02.054</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Composition; defects and impurities ; Condensed matter: structure, mechanical and thermal properties ; Defects ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Solid surfaces and solid-solid interfaces ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin layer ; X-ray diffraction</subject><ispartof>Journal of alloys and compounds, 2005-09, Vol.401 (1), p.221-225</ispartof><rights>2005 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c318t-87189da76862643731b9504b9d1203bb69f39f56b55d21805728d3081e01f92d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2005.02.054$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17190825$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Shalimov, A.</creatorcontrib><creatorcontrib>Bak-Misiuk, J.</creatorcontrib><creatorcontrib>Kaniewski, J.</creatorcontrib><creatorcontrib>Trela, J.</creatorcontrib><creatorcontrib>Wierzchowski, W.</creatorcontrib><creatorcontrib>Wieteska, K.</creatorcontrib><creatorcontrib>Graeff, W.</creatorcontrib><title>Defect structure of InAlAs/InP layers</title><title>Journal of alloys and compounds</title><description>In
x
Al
1
−
x
As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2
μm thick In
x
Al
1
−
x
As (0.50
≤
x
≤
0.53) layers were grown on the (0
0
1) oriented InP substrates by molecular beam epitaxy (MBE). They were investigated using X-ray diffraction and chemical etching. X-ray studies were performed applying high-resolution diffractometry in the double (DAD) and triple (TAD) axis configuration. It was found that the In
0.53Al
0.47As/InP layer under compressive strain relaxes partially along two 〈1
1
0〉 directions. On the other hand, the In
0.50Al
0.50As/InP layers, being under tensile strain, consist of two sub-layers; the first one, adjacent to the substrate is pseudomorphic whereas the upper sub-layer is partially relaxed and the relaxation is anisotropic. The upper sub-layer is fully strained in the [1
1
0] direction while partially relaxed in the [−1
1
0] one.</description><subject>Composition; defects and impurities</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin layer</subject><subject>X-ray diffraction</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkDtrwzAUhUVpoWnan1Dwkm52riRLlqYS0lcg0A7tLGQ9wEaxU8ku5N_XIYGOne7ynXO4H0L3GAoMmC_botUhmH5XEABWACmAlRdohkVF85JzeYlmIAnLBRXiGt2k1AIAlhTP0OLJeWeGLA1xNMMYXdb7bNOtwiotN91HFvTBxXSLrrwOyd2d7xx9vTx_rt_y7fvrZr3a5oZiMeSiwkJaXXHBCS9pRXEtGZS1tJgArWsuPZWe8ZoxS7AAVhFhKQjsAHtJLJ2jh1PvPvbfo0uD2jXJuBB05_oxKSJKXnLKJ5CdQBP7lKLzah-bnY4HhUEdpahWnaWooxQFRE1SptziPKCT0cFH3Zkm_YUrLEEQNnGPJ85N3_40LqpkGtcZZ5s46VK2b_5Z-gU_jXbl</recordid><startdate>20050929</startdate><enddate>20050929</enddate><creator>Shalimov, A.</creator><creator>Bak-Misiuk, J.</creator><creator>Kaniewski, J.</creator><creator>Trela, J.</creator><creator>Wierzchowski, W.</creator><creator>Wieteska, K.</creator><creator>Graeff, W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050929</creationdate><title>Defect structure of InAlAs/InP layers</title><author>Shalimov, A. ; Bak-Misiuk, J. ; Kaniewski, J. ; Trela, J. ; Wierzchowski, W. ; Wieteska, K. ; Graeff, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-87189da76862643731b9504b9d1203bb69f39f56b55d21805728d3081e01f92d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Composition; defects and impurities</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin layer</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shalimov, A.</creatorcontrib><creatorcontrib>Bak-Misiuk, J.</creatorcontrib><creatorcontrib>Kaniewski, J.</creatorcontrib><creatorcontrib>Trela, J.</creatorcontrib><creatorcontrib>Wierzchowski, W.</creatorcontrib><creatorcontrib>Wieteska, K.</creatorcontrib><creatorcontrib>Graeff, W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shalimov, A.</au><au>Bak-Misiuk, J.</au><au>Kaniewski, J.</au><au>Trela, J.</au><au>Wierzchowski, W.</au><au>Wieteska, K.</au><au>Graeff, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defect structure of InAlAs/InP layers</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2005-09-29</date><risdate>2005</risdate><volume>401</volume><issue>1</issue><spage>221</spage><epage>225</epage><pages>221-225</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>In
x
Al
1
−
x
As layers on InP substrate can be subjected to compressive as well as tensile strain due to lattice parameter differences induced by suitable alloy composition changes. The 2
μm thick In
x
Al
1
−
x
As (0.50
≤
x
≤
0.53) layers were grown on the (0
0
1) oriented InP substrates by molecular beam epitaxy (MBE). They were investigated using X-ray diffraction and chemical etching. X-ray studies were performed applying high-resolution diffractometry in the double (DAD) and triple (TAD) axis configuration. It was found that the In
0.53Al
0.47As/InP layer under compressive strain relaxes partially along two 〈1
1
0〉 directions. On the other hand, the In
0.50Al
0.50As/InP layers, being under tensile strain, consist of two sub-layers; the first one, adjacent to the substrate is pseudomorphic whereas the upper sub-layer is partially relaxed and the relaxation is anisotropic. The upper sub-layer is fully strained in the [1
1
0] direction while partially relaxed in the [−1
1
0] one.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2005.02.054</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0925-8388 |
| ispartof | Journal of alloys and compounds, 2005-09, Vol.401 (1), p.221-225 |
| issn | 0925-8388 1873-4669 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28464636 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Composition defects and impurities Condensed matter: structure, mechanical and thermal properties Defects Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin layer X-ray diffraction |
| title | Defect structure of InAlAs/InP layers |
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