X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3

Nitride layers were grown on a SiC surface by thermal nitridation using a mixed gas of NH3 and N2. The thermal nitridation was carried out at 1000 deg C and 1090 deg C under the atmospheric pressure. X-ray photoelectron spectroscopy (XPS) was used to characterize the surface layer. The peaks from Si...

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Veröffentlicht in:Materials science forum 2004-06, Vol.457-460, p.1549-1552
Hauptverfasser: Abe, Koji, Nakao, Masato, Yamagami, Takanobu, YingShen, L., Kamimura, Kiichi, Hashimoto, S., Hayashibe, R.
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container_title Materials science forum
container_volume 457-460
creator Abe, Koji
Nakao, Masato
Yamagami, Takanobu
YingShen, L.
Kamimura, Kiichi
Hashimoto, S.
Hayashibe, R.
description Nitride layers were grown on a SiC surface by thermal nitridation using a mixed gas of NH3 and N2. The thermal nitridation was carried out at 1000 deg C and 1090 deg C under the atmospheric pressure. X-ray photoelectron spectroscopy (XPS) was used to characterize the surface layer. The peaks from Si2p, C1s, N1s and O1s were observed in the XPS spectra. These peaks showed that the surface layer consisted of Si, N, C and O. The thickness of the surface layer was estimated at less than 10 nm.
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