Novel design topology for ultra low power down converters with broadband on chip matching network

A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 /spl mu/m GaAs-MESFET process. The circuit has a...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1995-12, Vol.43 (12), p.2946-2951
Hauptverfasser:	Schmatz, M.L., Lott, U., Baumberger, W., Baechtold, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance measurement Circuit topology Energy consumption Gain L-band Lithium Parasitic capacitance Power measurement Resistors Voltage
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container_title	IEEE transactions on microwave theory and techniques
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creator	Schmatz, M.L. Lott, U. Baumberger, W. Baechtold, W.
description	A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 /spl mu/m GaAs-MESFET process. The circuit has a single ended 50 /spl Omega/ input and differential outputs offering totally more than 40 dB voltage conversion gain at 1 GHz and 30 dB at 2 GHz. It is supplied by a single lithium cell and has a dc power consumption of less than 2.0 mW at 2.7 V. Through a more exact modeling of the parasitic capacitance of n-implanted resistors an improved agreement between measurement and simulation was achieved. Finally, the determination of the noise figure at a high impedance output from a 50 /spl Omega/ measurement is presented.
doi_str_mv	10.1109/22.475659
format	Article
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Finally, the determination of the noise figure at a high impedance output from a 50 /spl Omega/ measurement is presented.</description><subject>Capacitance measurement</subject><subject>Circuit topology</subject><subject>Energy consumption</subject><subject>Gain</subject><subject>L-band</subject><subject>Lithium</subject><subject>Parasitic capacitance</subject><subject>Power measurement</subject><subject>Resistors</subject><subject>Voltage</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqF0D1PwzAQBmALgUQpDKxMnpAYUhw7juMRVXxJFSwwW5f40gbSONhuo_57goJYmV6d7tFJ9xJymbJFmjJ9y_kiUzKX-ojMUilVonPFjsmMsbRIdFawU3IWwsc4ZpIVMwIvbo8ttRiadUej613r1gdaO093bfRAWzfQ3g3oqXVDRyvX7dFH9IEOTdzQ0juwJXSWunG5aXq6hThmt6YdxsH5z3NyUkMb8OI35-T94f5t-ZSsXh-fl3erpBKSxUQqy2tZ1oBQ8NKiFSKvci6k5JXUgtcghNKgx59KBkxoi0pZAI0VYm5RzMn1dLf37muHIZptEypsW-jQ7YLhRSYVL4r_ocqUTjUb4c0EK-9C8Fib3jdb8AeTMvPTtuHcTG2P9mqyDSL-ud_lN_cwfDA</recordid><startdate>19951201</startdate><enddate>19951201</enddate><creator>Schmatz, M.L.</creator><creator>Lott, U.</creator><creator>Baumberger, W.</creator><creator>Baechtold, W.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19951201</creationdate><title>Novel design topology for ultra low power down converters with broadband on chip matching network</title><author>Schmatz, M.L. ; Lott, U. ; Baumberger, W. ; Baechtold, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-57d2f5bfaea82bded336c623552c5932fa3379a9557b0a039de77daa9ecee6de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Capacitance measurement</topic><topic>Circuit topology</topic><topic>Energy consumption</topic><topic>Gain</topic><topic>L-band</topic><topic>Lithium</topic><topic>Parasitic capacitance</topic><topic>Power measurement</topic><topic>Resistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schmatz, M.L.</creatorcontrib><creatorcontrib>Lott, U.</creatorcontrib><creatorcontrib>Baumberger, W.</creatorcontrib><creatorcontrib>Baechtold, W.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schmatz, M.L.</au><au>Lott, U.</au><au>Baumberger, W.</au><au>Baechtold, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel design topology for ultra low power down converters with broadband on chip matching network</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1995-12-01</date><risdate>1995</risdate><volume>43</volume><issue>12</issue><spage>2946</spage><epage>2951</epage><pages>2946-2951</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 /spl mu/m GaAs-MESFET process. The circuit has a single ended 50 /spl Omega/ input and differential outputs offering totally more than 40 dB voltage conversion gain at 1 GHz and 30 dB at 2 GHz. It is supplied by a single lithium cell and has a dc power consumption of less than 2.0 mW at 2.7 V. Through a more exact modeling of the parasitic capacitance of n-implanted resistors an improved agreement between measurement and simulation was achieved. Finally, the determination of the noise figure at a high impedance output from a 50 /spl Omega/ measurement is presented.</abstract><pub>IEEE</pub><doi>10.1109/22.475659</doi><tpages>6</tpages></addata></record>
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subjects	Capacitance measurement Circuit topology Energy consumption Gain L-band Lithium Parasitic capacitance Power measurement Resistors Voltage
title	Novel design topology for ultra low power down converters with broadband on chip matching network
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