Anomalous leakage current in LPCVD PolySilicon MOSFET's
The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The mode...
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Veröffentlicht in: | IEEE transactions on electron devices 1985-09, Vol.32 (9), p.1878-1884 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The model predictions are consistent with measured current-voltage characteristics. Physical insight afforded by the model implies device design modifications to control and reduce I L , and indicates when the back-surface leakage component is significant. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1985.22212 |