Anomalous leakage current in LPCVD PolySilicon MOSFET's

The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The mode...

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Veröffentlicht in:IEEE transactions on electron devices 1985-09, Vol.32 (9), p.1878-1884
Hauptverfasser: Fossum, J.G., Ortiz-Conde, A., Shichijo, H., Banerjee, S.K.
Format: Artikel
Sprache:eng
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Zusammenfassung:The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The model predictions are consistent with measured current-voltage characteristics. Physical insight afforded by the model implies device design modifications to control and reduce I L , and indicates when the back-surface leakage component is significant.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22212