Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry
MOCVD was used to deposit tungsten nitride thin films from solutions of Cl 4(CH 3CN)W(N iPr) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The...
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| Veröffentlicht in: | Journal of crystal growth 2004-01, Vol.261 (2), p.280-288 |
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| container_title | Journal of crystal growth |
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| creator | Bchir, Omar J. Green, Kelly M. Hlad, Mark S. Anderson, Timothy J. Brooks, Benjamin C. McElwee-White, Lisa |
| description | MOCVD was used to deposit tungsten nitride thin films from solutions of Cl
4(CH
3CN)W(N
iPr) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The rate of carbon deposition was solvent-dependent, with apparent activation energies in films from PhCN and 1,2-DCB solutions being 0.70±0.10
eV and 1.0±0.14
eV, respectively. Residual gas analysis results were consistent with solvent decomposition in the reactor, and increased nitrogen levels for films from PhCN solutions suggest that the nitrile (CN) group was a significant carbon source. |
| doi_str_mv | 10.1016/j.jcrysgro.2003.11.018 |
| format | Article |
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4(CH
3CN)W(N
iPr) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The rate of carbon deposition was solvent-dependent, with apparent activation energies in films from PhCN and 1,2-DCB solutions being 0.70±0.10
eV and 1.0±0.14
eV, respectively. Residual gas analysis results were consistent with solvent decomposition in the reactor, and increased nitrogen levels for films from PhCN solutions suggest that the nitrile (CN) group was a significant carbon source.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2003.11.018</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Metalorganic chemical vapor deposition ; A3. Thin films ; B1. WN X ; B2. Diffusion barrier ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of crystal growth, 2004-01, Vol.261 (2), p.280-288</ispartof><rights>2003 Elsevier B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-49cb478c81e6aad08c4793552c1cf2b6521f43ade0fddde5831edfc2e1bfc2e63</citedby><cites>FETCH-LOGICAL-c371t-49cb478c81e6aad08c4793552c1cf2b6521f43ade0fddde5831edfc2e1bfc2e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2003.11.018$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15532480$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bchir, Omar J.</creatorcontrib><creatorcontrib>Green, Kelly M.</creatorcontrib><creatorcontrib>Hlad, Mark S.</creatorcontrib><creatorcontrib>Anderson, Timothy J.</creatorcontrib><creatorcontrib>Brooks, Benjamin C.</creatorcontrib><creatorcontrib>McElwee-White, Lisa</creatorcontrib><title>Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry</title><title>Journal of crystal growth</title><description>MOCVD was used to deposit tungsten nitride thin films from solutions of Cl
4(CH
3CN)W(N
iPr) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The rate of carbon deposition was solvent-dependent, with apparent activation energies in films from PhCN and 1,2-DCB solutions being 0.70±0.10
eV and 1.0±0.14
eV, respectively. Residual gas analysis results were consistent with solvent decomposition in the reactor, and increased nitrogen levels for films from PhCN solutions suggest that the nitrile (CN) group was a significant carbon source.</description><subject>A3. Metalorganic chemical vapor deposition</subject><subject>A3. Thin films</subject><subject>B1. WN X</subject><subject>B2. Diffusion barrier</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkE1vFDEMhkeISiylfwHlArcZ8jGZnXICbfmSinppe40yjtNmNZts4wzS_nuybBFHLrZkv69f-Wmat4J3govhw7bbQj7QQ06d5Fx1QnRcjC-alRjXqtWcy5fNqlbZctmPr5rXRFvOq1PwVfN0u8QHKhhZDCUHh6w8hsh8mHfEHO4ThYKOTQf282Zzf_WRUVoyILHkGdg8pchsdAy9Ryh1erIyKnmBsmT8s6WSAjyGtMOSD2-aM29nwovnft7cff1yu_neXt98-7H5fN2CWovS9pcw9esRRoGDtY6P0K8vldYSBHg5DVoK3yvrkHvnHOpRCXQeJIrpWAd13rw_3d3n9LQgFbMLBDjPNmJayMix10oPfRUOJyHkRJTRm30OO5sPRnBzJGy25i9hcyRshDCVcDW-e06wBHb22UYI9M-ttarAedV9OumwvvsrYDYEASOgC7lSMy6F_0X9BvgXl_Q</recordid><startdate>20040119</startdate><enddate>20040119</enddate><creator>Bchir, Omar J.</creator><creator>Green, Kelly M.</creator><creator>Hlad, Mark S.</creator><creator>Anderson, Timothy J.</creator><creator>Brooks, Benjamin C.</creator><creator>McElwee-White, Lisa</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20040119</creationdate><title>Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry</title><author>Bchir, Omar J. ; Green, Kelly M. ; Hlad, Mark S. ; Anderson, Timothy J. ; Brooks, Benjamin C. ; McElwee-White, Lisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-49cb478c81e6aad08c4793552c1cf2b6521f43ade0fddde5831edfc2e1bfc2e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>A3. Metalorganic chemical vapor deposition</topic><topic>A3. Thin films</topic><topic>B1. WN X</topic><topic>B2. Diffusion barrier</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bchir, Omar J.</creatorcontrib><creatorcontrib>Green, Kelly M.</creatorcontrib><creatorcontrib>Hlad, Mark S.</creatorcontrib><creatorcontrib>Anderson, Timothy J.</creatorcontrib><creatorcontrib>Brooks, Benjamin C.</creatorcontrib><creatorcontrib>McElwee-White, Lisa</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bchir, Omar J.</au><au>Green, Kelly M.</au><au>Hlad, Mark S.</au><au>Anderson, Timothy J.</au><au>Brooks, Benjamin C.</au><au>McElwee-White, Lisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry</atitle><jtitle>Journal of crystal growth</jtitle><date>2004-01-19</date><risdate>2004</risdate><volume>261</volume><issue>2</issue><spage>280</spage><epage>288</epage><pages>280-288</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>MOCVD was used to deposit tungsten nitride thin films from solutions of Cl
4(CH
3CN)W(N
iPr) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The rate of carbon deposition was solvent-dependent, with apparent activation energies in films from PhCN and 1,2-DCB solutions being 0.70±0.10
eV and 1.0±0.14
eV, respectively. Residual gas analysis results were consistent with solvent decomposition in the reactor, and increased nitrogen levels for films from PhCN solutions suggest that the nitrile (CN) group was a significant carbon source.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2003.11.018</doi><tpages>9</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2004-01, Vol.261 (2), p.280-288 |
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| subjects | A3. Metalorganic chemical vapor deposition A3. Thin films B1. WN X B2. Diffusion barrier Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry |
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