Indium sulfide thin films deposited by the spray ion layer gas reaction technique
The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalco...
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Veröffentlicht in: | Thin solid films 2006-08, Vol.513 (1), p.52-56 |
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creator | Allsop, N.A. Schönmann, A. Belaidi, A. Muffler, H.-J. Mertesacker, B. Bohne, W. Strub, E. Röhrich, J. Lux-Steiner, M.C. Fischer, Ch.-H. |
description | The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. |
doi_str_mv | 10.1016/j.tsf.2006.01.019 |
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High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2006.01.019</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Deposition process ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Energy ; Exact sciences and technology ; Indium sulfide ; Ion layer gas reaction — ILGAR ; Metals. Metallurgy ; Natural energy ; Photovoltaic conversion ; Physics ; Production techniques ; Solar cells. 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High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. 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Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Spray deposition</topic><topic>Surface treatment</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>X-ray diffraction</topic><topic>X-ray flourescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Allsop, N.A.</creatorcontrib><creatorcontrib>Schönmann, A.</creatorcontrib><creatorcontrib>Belaidi, A.</creatorcontrib><creatorcontrib>Muffler, H.-J.</creatorcontrib><creatorcontrib>Mertesacker, B.</creatorcontrib><creatorcontrib>Bohne, W.</creatorcontrib><creatorcontrib>Strub, E.</creatorcontrib><creatorcontrib>Röhrich, J.</creatorcontrib><creatorcontrib>Lux-Steiner, M.C.</creatorcontrib><creatorcontrib>Fischer, Ch.-H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Allsop, N.A.</au><au>Schönmann, A.</au><au>Belaidi, A.</au><au>Muffler, H.-J.</au><au>Mertesacker, B.</au><au>Bohne, W.</au><au>Strub, E.</au><au>Röhrich, J.</au><au>Lux-Steiner, M.C.</au><au>Fischer, Ch.-H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indium sulfide thin films deposited by the spray ion layer gas reaction technique</atitle><jtitle>Thin solid films</jtitle><date>2006-08-14</date><risdate>2006</risdate><volume>513</volume><issue>1</issue><spage>52</spage><epage>56</epage><pages>52-56</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2006.01.019</doi><tpages>5</tpages></addata></record> |
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subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Deposition process Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy Exact sciences and technology Indium sulfide Ion layer gas reaction — ILGAR Metals. Metallurgy Natural energy Photovoltaic conversion Physics Production techniques Solar cells. Photoelectrochemical cells Solar energy Spray deposition Surface treatment Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) X-ray diffraction X-ray flourescence |
title | Indium sulfide thin films deposited by the spray ion layer gas reaction technique |
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