Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p + n diodes were investigated. Both materials characterization (X-ray diffraction analysis, Rutherford backscattering spectrometry (RBS...

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Veröffentlicht in:	Thin solid films 2004-06, Vol.457 (2), p.338-345
Hauptverfasser:	Misra, E., Wang, Y., Theodore, N.D., Alford, T.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical interdiffusion diffusion barriers Cold working, work hardening annealing, post-deformation annealing, quenching, tempering recovery, and crystallization Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion barrier Diffusion in solids Electrical properties and measurements Electronics Exact sciences and technology Materials science Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silver metallization Transport properties of condensed matter (nonelectronic) Treatment of materials and its effects on microstructure and properties
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