InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor

An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain...

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Veröffentlicht in:	IEEE electron device letters 1996-10, Vol.17 (10), p.476-478, Article 476
Hauptverfasser:	Chen, C.L., Mahoney, L.J., Brown, E.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Etching FETs Implants Indium compounds Indium phosphide Metallization Microwave devices Millimeter wave communication Millimeter wave transistors Optical amplifiers
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container_title	IEEE electron device letters
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creator	Chen, C.L. Mahoney, L.J. Brown, E.R.
description	An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an f T as high as 42 GHz. An explanation for a new kink effect is also proposed.
doi_str_mv	10.1109/55.537080
format	Article
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The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an f T as high as 42 GHz. An explanation for a new kink effect is also proposed.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.537080</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Etching ; FETs ; Implants ; Indium compounds ; Indium phosphide ; Metallization ; Microwave devices ; Millimeter wave communication ; Millimeter wave transistors ; Optical amplifiers</subject><ispartof>IEEE electron device letters, 1996-10, Vol.17 (10), p.476-478, Article 476</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-457848ddd7a69214e0416661e4d7f3be71516ad833a136facc032119ea2dd2ba3</citedby><cites>FETCH-LOGICAL-c339t-457848ddd7a69214e0416661e4d7f3be71516ad833a136facc032119ea2dd2ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/537080$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/537080$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, C.L.</creatorcontrib><creatorcontrib>Mahoney, L.J.</creatorcontrib><creatorcontrib>Brown, E.R.</creatorcontrib><title>InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an f T as high as 42 GHz. An explanation for a new kink effect is also proposed.</description><subject>Etching</subject><subject>FETs</subject><subject>Implants</subject><subject>Indium compounds</subject><subject>Indium phosphide</subject><subject>Metallization</subject><subject>Microwave devices</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave transistors</subject><subject>Optical amplifiers</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqNkctLAzEQxoMoWKsHr572JHhIm9k8dvcoxUehoAfF45JuJiWS7tYke-h_78oWDyLoZR7M7_tgZgi5BDYDYNVcypnkBSvZEZmAlCVlUvFjMmGFAMqBqVNyFuM7YyBEISbkbdk-07WOaLKI3lLt3aYdmrYLW-39nnbWZrHfYfA6JdcgdW3shxoN3Qwxsw69oWgtNilLQbfRxdSFc3JitY94cchT8np_97J4pKunh-XidkUbzqtEhSxKURpjCq2qHAQyAUopQGEKy9dYgASlTcm5Bq6sbhrGc4AKdW5MvtZ8Sq5H313oPnqMqd662KD3usWuj3VeVsPmhfwHKIQEKf4GVS4rJdgA3oxgE7oYA9p6F9xWh30NrP56Ri1lPT5jYOc_2MYlnVzXDidz_lfF1ahwiPjtfBh-AlDHk-c</recordid><startdate>19961001</startdate><enddate>19961001</enddate><creator>Chen, C.L.</creator><creator>Mahoney, L.J.</creator><creator>Brown, E.R.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19961001</creationdate><title>InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor</title><author>Chen, C.L. ; Mahoney, L.J. ; Brown, E.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-457848ddd7a69214e0416661e4d7f3be71516ad833a136facc032119ea2dd2ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Etching</topic><topic>FETs</topic><topic>Implants</topic><topic>Indium compounds</topic><topic>Indium phosphide</topic><topic>Metallization</topic><topic>Microwave devices</topic><topic>Millimeter wave communication</topic><topic>Millimeter wave transistors</topic><topic>Optical amplifiers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, C.L.</creatorcontrib><creatorcontrib>Mahoney, L.J.</creatorcontrib><creatorcontrib>Brown, E.R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, C.L.</au><au>Mahoney, L.J.</au><au>Brown, E.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1996-10-01</date><risdate>1996</risdate><volume>17</volume><issue>10</issue><spage>476</spage><epage>478</epage><pages>476-478</pages><artnum>476</artnum><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an f T as high as 42 GHz. An explanation for a new kink effect is also proposed.</abstract><pub>IEEE</pub><doi>10.1109/55.537080</doi><tpages>3</tpages></addata></record>
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subjects	Etching FETs Implants Indium compounds Indium phosphide Metallization Microwave devices Millimeter wave communication Millimeter wave transistors Optical amplifiers
title	InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor
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