Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects

The large-signal microwave characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are modeled using the conventional Gummel-Poon-based bipolar junction transistor (BJT) model and extending it to include self-heating effects. The model is incorporated as a user-defined model in a co...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1997-04, Vol.45 (4), p.534-542
Hauptverfasser:	Samelis, A., Pavlidis, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit simulation Gallium arsenide Harmonic analysis Heterojunction bipolar transistors Microwave devices Microwave theory and techniques Microwave transistors Power generation Radio frequency Voltage
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