Analysis of erratic bits in flash memories

This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the der...

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Veröffentlicht in:	IEEE transactions on device and materials reliability 2001-12, Vol.1 (4), p.179-184
Hauptverfasser:	Chimenton, A., Pellati, P., Olivo, P.
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Amplitudes Applied sciences Capacitance Derivation Devices Dynamics Electronics Equivalence Exact sciences and technology Flash memory Flash memory (computers) Integrated circuit reliability Integrated circuits Integrated circuits by function (including memories and processors) Nonvolatile memory Semiconductor device reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor memory Shape control Testing Testing, measurement, noise and reliability Threshold voltage Thresholds Tracking Tunneling
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Beschreibung
Zusammenfassung:	This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection.
ISSN:	1530-4388 1558-2574
DOI:	10.1109/7298.995831