Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

The onset of impact-ionization-induced instabilities limits the operating range of Si-bipolar transistors, especially in power stages. Therefore, analytical relations which characterize the onset of instabilities are derived for different driving conditions (mainly V/sub BE/=const. and I/sub E/=cons...

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Veröffentlicht in:	IEEE transactions on electron devices 2001-04, Vol.48 (4), p.774-783
Hauptverfasser:	Rickelt, M., Rein, H.-M., Rose, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Driving conditions Electric potential Impact ionization Instability Mathematical analysis Semiconductor devices Stability Transistors Voltage
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