Analytical model of a semiconductor optical amplifier

The spatial dependence of the material gain is introduced in the model of a semiconductor optical amplifier. Analytical expressions of the profiles of the carrier density, spontaneous emission, and amplified fields are obtained for amplifiers with arbitrary facet reflectivities. The nonuniformity of...

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Veröffentlicht in:	Journal of lightwave technology 1994-01, Vol.12 (1), p.49-54
1. Verfasser:	Brosson, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Charge carrier density Optical amplifiers Optical materials Predictive models Reflectivity Resonance Semiconductor materials Semiconductor optical amplifiers Spontaneous emission
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