Inadequacy of the classical theory of the MOS transistor operating in weak inversion
The most important characteristics of the MOS transistor operating in weak inversion are discussed. When the drain voltage is greater than a few kT/q it is demonstrated that the drain current can be written as the product of the geometrical factor W/L , the minority carrier diffusion constant, and t...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1973-12, Vol.20 (12), p.1150-1153 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!