Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5×84 μm 2 exhibit a peak unity current gain cut-off frequency of f T =93 GHz...
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| Veröffentlicht in: | IEEE electron device letters 1994-01, Vol.15 (1), p.16-18 |
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| container_title | IEEE electron device letters |
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| creator | Bolognesi, C.R. Caine, E.J. Kroemer, H. |
| description | We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5×84 μm 2 exhibit a peak unity current gain cut-off frequency of f T =93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f T , and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases. |
| doi_str_mv | 10.1109/55.289476 |
| format | Article |
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Microwave devices with a 0.5×84 μm 2 exhibit a peak unity current gain cut-off frequency of f T =93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f T , and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.289476</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum ; Applied sciences ; Buffer layers ; Cutoff frequency ; Electronics ; Electrons ; Exact sciences and technology ; FETs ; HEMTs ; Microwave devices ; Microwave generation ; MODFETs ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Microwave devices with a 0.5×84 μm 2 exhibit a peak unity current gain cut-off frequency of f T =93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f T , and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases.</description><subject>Aluminum</subject><subject>Applied sciences</subject><subject>Buffer layers</subject><subject>Cutoff frequency</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>HEMTs</subject><subject>Microwave devices</subject><subject>Microwave generation</subject><subject>MODFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAUhS0EEqUwsDJ5QEgMaa9jO07GquJRqRIDMEeOfU2D8ii2i9R_T6pUnZnucL9zpO8QcstgxhgUcylnaV4IlZ2RCZMyT0Bm_JxMQAmWcAbZJbkK4RuACaHEhLSrduv7X7TUbLT_Qmr6Lvq-obqz1Hn82WFn9nSL3vW-1Z1BWnd01S3CfNG8V0mlw5DdYETfh-h3Ju48UldjYxN0Dk2k0esu1CH2PlyTC6ebgDfHOyWfz08fy9dk_fayWi7WiRHAY6I4U9KlHNBkhUxzkJVW3ErLnNUgpUqtthkybZUSBqoKIS_SCguN3Bjt-JQ8jL2D22AQYtnWwWDT6A77XSiHiXjOiuIfoAAhUjWAjyNoBs_g0ZVbX7fa70sG5WH5UspyXH5g74-lOhjduMHf1OEUEKBSBYfKuxGrEfH0PXb8ATGLjP0</recordid><startdate>199401</startdate><enddate>199401</enddate><creator>Bolognesi, C.R.</creator><creator>Caine, E.J.</creator><creator>Kroemer, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>199401</creationdate><title>Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors</title><author>Bolognesi, C.R. ; Caine, E.J. ; Kroemer, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-73175f230ec6952805ba73d5d1fda05572dad6e1ad774c0bbe0892be9ae3ccaf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Aluminum</topic><topic>Applied sciences</topic><topic>Buffer layers</topic><topic>Cutoff frequency</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>HEMTs</topic><topic>Microwave devices</topic><topic>Microwave generation</topic><topic>MODFETs</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bolognesi, C.R.</creatorcontrib><creatorcontrib>Caine, E.J.</creatorcontrib><creatorcontrib>Kroemer, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bolognesi, C.R.</au><au>Caine, E.J.</au><au>Kroemer, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1994-01</date><risdate>1994</risdate><volume>15</volume><issue>1</issue><spage>16</spage><epage>18</epage><pages>16-18</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5×84 μm 2 exhibit a peak unity current gain cut-off frequency of f T =93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f T , and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.289476</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1994-01, Vol.15 (1), p.16-18 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Applied sciences Buffer layers Cutoff frequency Electronics Electrons Exact sciences and technology FETs HEMTs Microwave devices Microwave generation MODFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors |
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