Magnetostriction constants of sputtered FeTaN single crystal thin films
FeTaN single crystal thin films were grown to investigate the dependence of the magnetostriction constants, /spl lambda//sub 100/ and /spl lambda//sub 111/ on nitrogen content. Films with 5 wt.% Ta and different nitrogen contents were prepared by dc sputtering on MgO (100) substrates at elevated tem...
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Veröffentlicht in: | IEEE Transactions on Magnetics 1996-09, Vol.32 (5), p.3542-3544 |
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container_title | IEEE Transactions on Magnetics |
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creator | Varga, L. Doyle, W.D. Klemmer, T. Flanders, P.J. Kozaczek, K.J. |
description | FeTaN single crystal thin films were grown to investigate the dependence of the magnetostriction constants, /spl lambda//sub 100/ and /spl lambda//sub 111/ on nitrogen content. Films with 5 wt.% Ta and different nitrogen contents were prepared by dc sputtering on MgO (100) substrates at elevated temperatures. The films' principal orientation with respect to the substrate were (100)/spl par/(100) and [100]/spl par/[110] with a small fraction of (221)/spl par/(100) due to twinning. The values of |/spl lambda//sub 100/| and |/spl lambda//sub 111/| relative to pure Fe decreased by a factor of /spl sim/2 to a minimum near 2 at% nitrogen and then slowly increased at higher nitrogen content. The saturation magnetostriction calculated for a polycrystalline material using the measured values of /spl lambda//sub 100/ and /spl lambda//sub 111/ shows a considerable discrepancy at higher nitrogen content with published experimental data. |
doi_str_mv | 10.1109/20.538684 |
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Films with 5 wt.% Ta and different nitrogen contents were prepared by dc sputtering on MgO (100) substrates at elevated temperatures. The films' principal orientation with respect to the substrate were (100)/spl par/(100) and [100]/spl par/[110] with a small fraction of (221)/spl par/(100) due to twinning. The values of |/spl lambda//sub 100/| and |/spl lambda//sub 111/| relative to pure Fe decreased by a factor of /spl sim/2 to a minimum near 2 at% nitrogen and then slowly increased at higher nitrogen content. The saturation magnetostriction calculated for a polycrystalline material using the measured values of /spl lambda//sub 100/ and /spl lambda//sub 111/ shows a considerable discrepancy at higher nitrogen content with published experimental data.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.538684</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>CHEMICAL COMPOSITION ; GRAIN ORIENTATION ; Grain size ; Iron ; IRON BASE ALLOYS ; Magnetic field measurement ; Magnetic films ; MAGNETOSTRICTION ; MATERIALS SCIENCE ; MONOCRYSTALS ; Nitrogen ; NITROGEN ADDITIONS ; Optical films ; Sputtering ; Substrates ; TANTALUM ALLOYS ; X-ray diffraction</subject><ispartof>IEEE Transactions on Magnetics, 1996-09, Vol.32 (5), p.3542-3544</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c303t-f974b6b8b5e516bde990a7beacab5b78365c8abd7fef9322886280fa5d2bf3ad3</citedby><cites>FETCH-LOGICAL-c303t-f974b6b8b5e516bde990a7beacab5b78365c8abd7fef9322886280fa5d2bf3ad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/538684$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/538684$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/419723$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Varga, L.</creatorcontrib><creatorcontrib>Doyle, W.D.</creatorcontrib><creatorcontrib>Klemmer, T.</creatorcontrib><creatorcontrib>Flanders, P.J.</creatorcontrib><creatorcontrib>Kozaczek, K.J.</creatorcontrib><title>Magnetostriction constants of sputtered FeTaN single crystal thin films</title><title>IEEE Transactions on Magnetics</title><addtitle>TMAG</addtitle><description>FeTaN single crystal thin films were grown to investigate the dependence of the magnetostriction constants, /spl lambda//sub 100/ and /spl lambda//sub 111/ on nitrogen content. Films with 5 wt.% Ta and different nitrogen contents were prepared by dc sputtering on MgO (100) substrates at elevated temperatures. The films' principal orientation with respect to the substrate were (100)/spl par/(100) and [100]/spl par/[110] with a small fraction of (221)/spl par/(100) due to twinning. The values of |/spl lambda//sub 100/| and |/spl lambda//sub 111/| relative to pure Fe decreased by a factor of /spl sim/2 to a minimum near 2 at% nitrogen and then slowly increased at higher nitrogen content. The saturation magnetostriction calculated for a polycrystalline material using the measured values of /spl lambda//sub 100/ and /spl lambda//sub 111/ shows a considerable discrepancy at higher nitrogen content with published experimental data.</description><subject>CHEMICAL COMPOSITION</subject><subject>GRAIN ORIENTATION</subject><subject>Grain size</subject><subject>Iron</subject><subject>IRON BASE ALLOYS</subject><subject>Magnetic field measurement</subject><subject>Magnetic films</subject><subject>MAGNETOSTRICTION</subject><subject>MATERIALS SCIENCE</subject><subject>MONOCRYSTALS</subject><subject>Nitrogen</subject><subject>NITROGEN ADDITIONS</subject><subject>Optical films</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>TANTALUM ALLOYS</subject><subject>X-ray diffraction</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo90E1LAzEQBuAgCtbqwauneBE8bM3HfiRHKbYKVS_1HJLspI1sszVJD_33rmzxNAzz8DK8CN1SMqOUyCdGZhUXtSjP0ITKkhaE1PIcTQihopBlXV6iq5S-h7WsKJmg5bveBMh9ytHb7PuAbR9S1iEn3Duc9oecIUKLF7DWHzj5sOkA23gcTIfz1gfsfLdL1-jC6S7BzWlO0dfiZT1_LVafy7f586qwnPBcONmUpjbCVFDR2rQgJdGNAW21qUwjeF1ZoU3bOHCSMyZEzQRxumqZcVy3fIrux9zhY6-S9Rnsdng5gM2qpLJhfDAPo9nH_ucAKaudTxa6TgfoD0kxwYds-gcfR2hjn1IEp_bR73Q8KkrUX52KETXWOdi70XoA-Hen4y-O0nCq</recordid><startdate>19960901</startdate><enddate>19960901</enddate><creator>Varga, L.</creator><creator>Doyle, W.D.</creator><creator>Klemmer, T.</creator><creator>Flanders, P.J.</creator><creator>Kozaczek, K.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19960901</creationdate><title>Magnetostriction constants of sputtered FeTaN single crystal thin films</title><author>Varga, L. ; Doyle, W.D. ; Klemmer, T. ; Flanders, P.J. ; Kozaczek, K.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-f974b6b8b5e516bde990a7beacab5b78365c8abd7fef9322886280fa5d2bf3ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>CHEMICAL COMPOSITION</topic><topic>GRAIN ORIENTATION</topic><topic>Grain size</topic><topic>Iron</topic><topic>IRON BASE ALLOYS</topic><topic>Magnetic field measurement</topic><topic>Magnetic films</topic><topic>MAGNETOSTRICTION</topic><topic>MATERIALS SCIENCE</topic><topic>MONOCRYSTALS</topic><topic>Nitrogen</topic><topic>NITROGEN ADDITIONS</topic><topic>Optical films</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>TANTALUM ALLOYS</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Varga, L.</creatorcontrib><creatorcontrib>Doyle, W.D.</creatorcontrib><creatorcontrib>Klemmer, T.</creatorcontrib><creatorcontrib>Flanders, P.J.</creatorcontrib><creatorcontrib>Kozaczek, K.J.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Varga, L.</au><au>Doyle, W.D.</au><au>Klemmer, T.</au><au>Flanders, P.J.</au><au>Kozaczek, K.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetostriction constants of sputtered FeTaN single crystal thin films</atitle><jtitle>IEEE Transactions on Magnetics</jtitle><stitle>TMAG</stitle><date>1996-09-01</date><risdate>1996</risdate><volume>32</volume><issue>5</issue><spage>3542</spage><epage>3544</epage><pages>3542-3544</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>FeTaN single crystal thin films were grown to investigate the dependence of the magnetostriction constants, /spl lambda//sub 100/ and /spl lambda//sub 111/ on nitrogen content. Films with 5 wt.% Ta and different nitrogen contents were prepared by dc sputtering on MgO (100) substrates at elevated temperatures. The films' principal orientation with respect to the substrate were (100)/spl par/(100) and [100]/spl par/[110] with a small fraction of (221)/spl par/(100) due to twinning. The values of |/spl lambda//sub 100/| and |/spl lambda//sub 111/| relative to pure Fe decreased by a factor of /spl sim/2 to a minimum near 2 at% nitrogen and then slowly increased at higher nitrogen content. The saturation magnetostriction calculated for a polycrystalline material using the measured values of /spl lambda//sub 100/ and /spl lambda//sub 111/ shows a considerable discrepancy at higher nitrogen content with published experimental data.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/20.538684</doi><tpages>3</tpages></addata></record> |
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subjects | CHEMICAL COMPOSITION GRAIN ORIENTATION Grain size Iron IRON BASE ALLOYS Magnetic field measurement Magnetic films MAGNETOSTRICTION MATERIALS SCIENCE MONOCRYSTALS Nitrogen NITROGEN ADDITIONS Optical films Sputtering Substrates TANTALUM ALLOYS X-ray diffraction |
title | Magnetostriction constants of sputtered FeTaN single crystal thin films |
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