A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications

A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1998-03, Vol.33 (3), p.344-358
Hauptverfasser: Binkley, D.M., Rochelle, J.M., Swann, B.K., Clonts, L.G., Goble, R.N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 358
container_issue 3
container_start_page 344
container_title IEEE journal of solid-state circuits
container_volume 33
creator Binkley, D.M.
Rochelle, J.M.
Swann, B.K.
Clonts, L.G.
Goble, R.N.
description A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.
doi_str_mv 10.1109/4.661200
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28386520</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>661200</ieee_id><sourcerecordid>28921218</sourcerecordid><originalsourceid>FETCH-LOGICAL-c306t-dea936bf74262c28f3c6b1c18119558f315c8df3ca686b299eff9b112e22b6f23</originalsourceid><addsrcrecordid>eNqNkD1PwzAQhi0EEqUgMTN5QgxN8TmJa49VRQGpqAMfYguOcwajpAl2SsW_xyiImel0zz130r2EnAKbAjB1mU2FAM7YHhlBnssEZunzPhkxBjJRkR-SoxDeY5tlEkbkZU4bZ3zbtTv0dHG3vp_Qynk0fWLazSf64NrNhD6tljRCdJFQ8-Y6altPG_26wd6ZxDqsK7qLezWGQHXX1c7oPq6GY3JgdR3w5LeOyePy6mFxk6zW17eL-SoxKRN9UqFWqSjtLOOCGy5takQJBiSAim_YFHIjq0i1kKLkSqG1qgTgyHkpLE_H5Hy42_n2Y4uhLxoXDNa13mC7DQWXigMH-Q8xlSLnLIoXgxjjCcGjLTrvGu2_CmDFT9ZFVgxZR_VsUB0i_mm_w29mf3kh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28386520</pqid></control><display><type>article</type><title>A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications</title><source>IEEE Electronic Library (IEL)</source><creator>Binkley, D.M. ; Rochelle, J.M. ; Swann, B.K. ; Clonts, L.G. ; Goble, R.N.</creator><creatorcontrib>Binkley, D.M. ; Rochelle, J.M. ; Swann, B.K. ; Clonts, L.G. ; Goble, R.N.</creatorcontrib><description>A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.661200</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>1f noise ; Baseband ; Digital signal processing chips ; Local oscillators ; Magnetic resonance ; Magnetic sensors ; Phase locked loops ; Preamplifiers ; Radio frequency ; Sensor phenomena and characterization</subject><ispartof>IEEE journal of solid-state circuits, 1998-03, Vol.33 (3), p.344-358</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-dea936bf74262c28f3c6b1c18119558f315c8df3ca686b299eff9b112e22b6f23</citedby><cites>FETCH-LOGICAL-c306t-dea936bf74262c28f3c6b1c18119558f315c8df3ca686b299eff9b112e22b6f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/661200$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/661200$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Binkley, D.M.</creatorcontrib><creatorcontrib>Rochelle, J.M.</creatorcontrib><creatorcontrib>Swann, B.K.</creatorcontrib><creatorcontrib>Clonts, L.G.</creatorcontrib><creatorcontrib>Goble, R.N.</creatorcontrib><title>A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.</description><subject>1f noise</subject><subject>Baseband</subject><subject>Digital signal processing chips</subject><subject>Local oscillators</subject><subject>Magnetic resonance</subject><subject>Magnetic sensors</subject><subject>Phase locked loops</subject><subject>Preamplifiers</subject><subject>Radio frequency</subject><subject>Sensor phenomena and characterization</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkD1PwzAQhi0EEqUgMTN5QgxN8TmJa49VRQGpqAMfYguOcwajpAl2SsW_xyiImel0zz130r2EnAKbAjB1mU2FAM7YHhlBnssEZunzPhkxBjJRkR-SoxDeY5tlEkbkZU4bZ3zbtTv0dHG3vp_Qynk0fWLazSf64NrNhD6tljRCdJFQ8-Y6altPG_26wd6ZxDqsK7qLezWGQHXX1c7oPq6GY3JgdR3w5LeOyePy6mFxk6zW17eL-SoxKRN9UqFWqSjtLOOCGy5takQJBiSAim_YFHIjq0i1kKLkSqG1qgTgyHkpLE_H5Hy42_n2Y4uhLxoXDNa13mC7DQWXigMH-Q8xlSLnLIoXgxjjCcGjLTrvGu2_CmDFT9ZFVgxZR_VsUB0i_mm_w29mf3kh</recordid><startdate>199803</startdate><enddate>199803</enddate><creator>Binkley, D.M.</creator><creator>Rochelle, J.M.</creator><creator>Swann, B.K.</creator><creator>Clonts, L.G.</creator><creator>Goble, R.N.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>199803</creationdate><title>A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications</title><author>Binkley, D.M. ; Rochelle, J.M. ; Swann, B.K. ; Clonts, L.G. ; Goble, R.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-dea936bf74262c28f3c6b1c18119558f315c8df3ca686b299eff9b112e22b6f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>1f noise</topic><topic>Baseband</topic><topic>Digital signal processing chips</topic><topic>Local oscillators</topic><topic>Magnetic resonance</topic><topic>Magnetic sensors</topic><topic>Phase locked loops</topic><topic>Preamplifiers</topic><topic>Radio frequency</topic><topic>Sensor phenomena and characterization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Binkley, D.M.</creatorcontrib><creatorcontrib>Rochelle, J.M.</creatorcontrib><creatorcontrib>Swann, B.K.</creatorcontrib><creatorcontrib>Clonts, L.G.</creatorcontrib><creatorcontrib>Goble, R.N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Binkley, D.M.</au><au>Rochelle, J.M.</au><au>Swann, B.K.</au><au>Clonts, L.G.</au><au>Goble, R.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1998-03</date><risdate>1998</risdate><volume>33</volume><issue>3</issue><spage>344</spage><epage>358</epage><pages>344-358</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.</abstract><pub>IEEE</pub><doi>10.1109/4.661200</doi><tpages>15</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 1998-03, Vol.33 (3), p.344-358
issn 0018-9200
1558-173X
language eng
recordid cdi_proquest_miscellaneous_28386520
source IEEE Electronic Library (IEL)
subjects 1f noise
Baseband
Digital signal processing chips
Local oscillators
Magnetic resonance
Magnetic sensors
Phase locked loops
Preamplifiers
Radio frequency
Sensor phenomena and characterization
title A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T19%3A13%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20micropower%20CMOS,%20direct-conversion,%20VLF%20receiver%20chip%20for%20magnetic-field%20wireless%20applications&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Binkley,%20D.M.&rft.date=1998-03&rft.volume=33&rft.issue=3&rft.spage=344&rft.epage=358&rft.pages=344-358&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/4.661200&rft_dat=%3Cproquest_RIE%3E28921218%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28386520&rft_id=info:pmid/&rft_ieee_id=661200&rfr_iscdi=true