Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances

In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the ser...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-11, Vol.41 (11), p.1981-1991
1. Verfasser:	Kleinpenning, T.G.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Bipolar transistor circuits Bipolar transistors Circuit noise Electrical resistance measurement Electronics Exact sciences and technology Fluctuations Heterojunction bipolar transistors Low-frequency noise Microwave transistors Noise measurement Testing, measurement, noise and reliability
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