Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances
In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the ser...
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| Veröffentlicht in: | IEEE transactions on electron devices 1994-11, Vol.41 (11), p.1981-1991 |
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| container_end_page | 1991 |
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| container_issue | 11 |
| container_start_page | 1981 |
| container_title | IEEE transactions on electron devices |
| container_volume | 41 |
| creator | Kleinpenning, T.G.M. |
| description | In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important.< > |
| doi_str_mv | 10.1109/16.333815 |
| format | Article |
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In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important.< ></description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Bipolar transistor circuits</subject><subject>Bipolar transistors</subject><subject>Circuit noise</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fluctuations</subject><subject>Heterojunction bipolar transistors</subject><subject>Low-frequency noise</subject><subject>Microwave transistors</subject><subject>Noise measurement</subject><subject>Testing, measurement, noise and reliability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkUFr3DAQhUVIINtND732pEMo5OBEI8m23FtYkiawkEtyNrPyGFS8lqtxCPvvo-2GsrfmMsPwvnnwZoT4BuoaQDU3UF0bYxyUJ2IBZVkXTWWrU7FQClzRGGfOxRfm33msrNULkdbxregT_Xml0e_kGAOTDKPcxo7SKDdhigMmOSccOfAcE_-UYTuhn2XsMzinkAV_BEgcOzlhQg5zFphSIJaJ9iqOnvhCnPU4MH396Evxcn_3vHoo1k-_Hle368LbqpkL6MjlKGgNaOorXdaNtXVtN7TpaoOoQPegcyFbe2V0DaU3tuwQK6dMR2Ypfhx8pxRzPJ7bbWBPw4AjxVdutWu0U8p8AjROW6f_D-abQmMhg1cH0KfInKhvpxS2mHYtqHb_pxaq9vCnzF5-mCJ7HPp8SB_434IxFkq7x74fsEBER-pfj3dXo5tJ</recordid><startdate>19941101</startdate><enddate>19941101</enddate><creator>Kleinpenning, T.G.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19941101</creationdate><title>Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances</title><author>Kleinpenning, T.G.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c469t-1de8333a4312ef6257944774bebd73aa012f1212fe47c032715c345daa6803de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Bipolar transistor circuits</topic><topic>Bipolar transistors</topic><topic>Circuit noise</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fluctuations</topic><topic>Heterojunction bipolar transistors</topic><topic>Low-frequency noise</topic><topic>Microwave transistors</topic><topic>Noise measurement</topic><topic>Testing, measurement, noise and reliability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kleinpenning, T.G.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kleinpenning, T.G.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-11-01</date><risdate>1994</risdate><volume>41</volume><issue>11</issue><spage>1981</spage><epage>1991</epage><pages>1981-1991</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.333815</doi><tpages>11</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.1981-1991 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bandwidth Bipolar transistor circuits Bipolar transistors Circuit noise Electrical resistance measurement Electronics Exact sciences and technology Fluctuations Heterojunction bipolar transistors Low-frequency noise Microwave transistors Noise measurement Testing, measurement, noise and reliability |
| title | Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances |
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