Measuring and fitting the MOS transistor at high frequencies

A novel small-signal model of a MOS transistor is presented, which is valid at frequencies around the unity gain frequency. As a major advantage compared with earlier models, this novel model takes into account the nonquasistatic and transmission-line effects of the transistor. By using S-parameter...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on instrumentation and measurement 1988-12, Vol.37 (4), p.591-595
Hauptverfasser:	Vandeloo, P., Sansen, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Capacitance Circuits Doping Equations Frequency conversion Frequency measurement MOSFETs Transmission line measurements Transmission line theory
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!