Side gating in silicon germanium hetero-dimensional field effect transistors

Investigation into the side gate control of a two-dimensional hole gas in a silicon germanium hetero-dimensional field effect transistor (HDFET) is presented. Side gates within these devices form pn junctions between a three-dimensional contact and a two-dimensional electron or hole (Fermi) gas. A p...

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Veröffentlicht in:	Microelectronic engineering 2004-02, Vol.71 (2), p.197-208
Hauptverfasser:	Cheng, Tongwei, Greer, J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	2DEG 2DHG Applied sciences Electronics Exact sciences and technology HDFET Interfaces Quantum well Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Side gate Silicon germanium Transistors
Online-Zugang:	Volltext
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