RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

In this paper we report on our efforts to reduce trap effects, increase efficiency, and improve the yield and reliability of SiC MESFETs. By minimizing substrate and surface-related trapping effects that have previously been observed in SiC MESFETs, drain efficiencies as high as 68% have been achiev...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2004-01, Vol.457-460, p.1205-1208
Hauptverfasser:	Jenny, Jason R., Alcorn, T.S., Hagleitner, H., Henning, Jason, Janke, C., Ward, A., Allen, S.T., Sriram, Saptharishi, Sumakeris, Joseph J., Wieber, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!