Magnetic effects of periodic step-structures under permalloy/SAL thin films
Anisotropic magnetoresistance read devices may employ step-structures under a MR/SAL stack to aid in sensor stabilization. Thin film NiFe/SAL sheet MR elements with step-structures were studied using the magneto-optic Kerr effect with a goal to understand and control this sensor stabilization techno...
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| Veröffentlicht in: | IEEE transactions on magnetics 2004-07, Vol.40 (4), p.2215-2217 |
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| container_title | IEEE transactions on magnetics |
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| creator | Arnold, C.S. Helms, C. Denison, E.V. Alstrin, A. |
| description | Anisotropic magnetoresistance read devices may employ step-structures under a MR/SAL stack to aid in sensor stabilization. Thin film NiFe/SAL sheet MR elements with step-structures were studied using the magneto-optic Kerr effect with a goal to understand and control this sensor stabilization technology. The Kerr effect experimental data was compared to a micromagnetic simulation of the elements. Hard-axis magnetization curves and magnetic susceptibility were studied as a function of step-structure geometry. We find that the step-structures act as an effective anisotropy that increases with decreasing period or increasing depth or steepness. We discuss our conclusions with respect to design criteria and process control. |
| doi_str_mv | 10.1109/TMAG.2004.832116 |
| format | Article |
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Thin film NiFe/SAL sheet MR elements with step-structures were studied using the magneto-optic Kerr effect with a goal to understand and control this sensor stabilization technology. The Kerr effect experimental data was compared to a micromagnetic simulation of the elements. Hard-axis magnetization curves and magnetic susceptibility were studied as a function of step-structure geometry. We find that the step-structures act as an effective anisotropy that increases with decreasing period or increasing depth or steepness. 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Thin film NiFe/SAL sheet MR elements with step-structures were studied using the magneto-optic Kerr effect with a goal to understand and control this sensor stabilization technology. The Kerr effect experimental data was compared to a micromagnetic simulation of the elements. Hard-axis magnetization curves and magnetic susceptibility were studied as a function of step-structure geometry. We find that the step-structures act as an effective anisotropy that increases with decreasing period or increasing depth or steepness. We discuss our conclusions with respect to design criteria and process control.</description><subject>Anisotropic magnetoresistance</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Kerr effect</subject><subject>Magnetic anisotropy</subject><subject>Magnetic films</subject><subject>Magnetic properties and materials</subject><subject>Magnetic sensors</subject><subject>Magnetism</subject><subject>Magnetooptic devices</subject><subject>Magnetooptic effects</subject><subject>Micromagnetics</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Physics</subject><subject>Thin film sensors</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkTFPwzAQhS0EEqWwI7FESLClPceOY49VBQXRioEyW65zhlRpUuxk6L8naStVYmI63b3vnnT3CLmlMKIU1Hi5mMxGCQAfSZZQKs7IgCpOYwChzskAgMpYccEvyVUI667lKYUBeVuYrwqbwkboHNomRLWLtuiLOu9mocFtHBrf2qb1GKK2ytH38saUZb0bf0zmUfNdVJEryk24JhfOlAFvjnVIPp-fltOXeP4-e51O5rFlEpp4ZYSiObUK0LHM5Cx1QgmRUJULlCwVBlPMcmUThGyVSw45spW0wJVZOWBsSB4Pvltf_7QYGr0pgsWyNBXWbdCJzKjgSvwDZELKveP9H3Bdt77qjtBScgpJ9-EOggNkfR2CR6e3vtgYv9MUdJ-B7jPQfQb6kEG38nD0NcGa0nlT2SKc9gSINNlzdweuQMSTzJKUpxn7Bfqfjs8</recordid><startdate>20040701</startdate><enddate>20040701</enddate><creator>Arnold, C.S.</creator><creator>Helms, C.</creator><creator>Denison, E.V.</creator><creator>Alstrin, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Thin film NiFe/SAL sheet MR elements with step-structures were studied using the magneto-optic Kerr effect with a goal to understand and control this sensor stabilization technology. The Kerr effect experimental data was compared to a micromagnetic simulation of the elements. Hard-axis magnetization curves and magnetic susceptibility were studied as a function of step-structure geometry. We find that the step-structures act as an effective anisotropy that increases with decreasing period or increasing depth or steepness. We discuss our conclusions with respect to design criteria and process control.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2004.832116</doi><tpages>3</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anisotropic magnetoresistance Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Kerr effect Magnetic anisotropy Magnetic films Magnetic properties and materials Magnetic sensors Magnetism Magnetooptic devices Magnetooptic effects Micromagnetics Perpendicular magnetic anisotropy Physics Thin film sensors |
| title | Magnetic effects of periodic step-structures under permalloy/SAL thin films |
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