Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures
T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-ti...
Gespeichert in:
| Veröffentlicht in: | Journal of microelectromechanical systems 2004-10, Vol.13 (5), p.870-879 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 879 |
|---|---|
| container_issue | 5 |
| container_start_page | 870 |
| container_title | Journal of microelectromechanical systems |
| container_volume | 13 |
| creator | Wen-Hsien Chuang Luger, T. Fettig, R.K. Ghodssi, R. |
| description | T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures. |
| doi_str_mv | 10.1109/JMEMS.2004.836815 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28367767</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1341463</ieee_id><sourcerecordid>2583188401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c450t-4f8bcfdfd2d09c2c9df1857dc5fd504c90fc9dd4691415dd04400a9b6c947bd03</originalsourceid><addsrcrecordid>eNqNkUtLAzEUhQdR8PkDxE1woaupNzNJJllKfdOi4GMb0jxsZDpTk3RRf72pFQQX4upeDt85cDhFcYhhgDGIs7vx5fhxUAGQAa8Zx3Sj2MGC4BIw5Zv5B9qUDabNdrEb4xsAJoSznWIytnqqOq9Vi-ahn9uQligrQelkg_9Qyfcd6h0aPQxfLlD0rddZ6HwK3liUpr5DzreziFRCOiz7V5vDULKzHKXSIti4X2w51UZ78H33iuery6fhTTm6v74dno9KTSikkjg-0c44UxkQutLCOMxpYzR1hgLRAlzWDGECE0yNAUIAlJgwLUgzMVDvFafr3NzjfWFjkjMftW1b1dl-EWX2MUpyZiZP_iQrzoFgwf4B1qxpWJPB41_gW78IXa4rRQVcAGM4Q3gN6dDHGKyT8-BnKiwlBrlaUX6tKFcryvWK2XO09nhr7Q9fk1ymrj8BhESZyQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>920890661</pqid></control><display><type>article</type><title>Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures</title><source>IEEE Electronic Library (IEL)</source><creator>Wen-Hsien Chuang ; Luger, T. ; Fettig, R.K. ; Ghodssi, R.</creator><creatorcontrib>Wen-Hsien Chuang ; Luger, T. ; Fettig, R.K. ; Ghodssi, R.</creatorcontrib><description>T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures.</description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/JMEMS.2004.836815</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Actuators ; Cryogenic temperature ; Cryogenics ; Fracture strength ; Mechanical factors ; Mechanical properties ; Microelectromechanical systems ; Modulus of elasticity ; Resonant frequencies ; Semiconductor thin films ; Signal generators ; Silicon ; Silicon nitride ; Temperature distribution ; Temperature measurement ; Temperature sensors ; Thin films ; Voltage</subject><ispartof>Journal of microelectromechanical systems, 2004-10, Vol.13 (5), p.870-879</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-4f8bcfdfd2d09c2c9df1857dc5fd504c90fc9dd4691415dd04400a9b6c947bd03</citedby><cites>FETCH-LOGICAL-c450t-4f8bcfdfd2d09c2c9df1857dc5fd504c90fc9dd4691415dd04400a9b6c947bd03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1341463$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1341463$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wen-Hsien Chuang</creatorcontrib><creatorcontrib>Luger, T.</creatorcontrib><creatorcontrib>Fettig, R.K.</creatorcontrib><creatorcontrib>Ghodssi, R.</creatorcontrib><title>Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures</title><title>Journal of microelectromechanical systems</title><addtitle>JMEMS</addtitle><description>T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures.</description><subject>Actuators</subject><subject>Cryogenic temperature</subject><subject>Cryogenics</subject><subject>Fracture strength</subject><subject>Mechanical factors</subject><subject>Mechanical properties</subject><subject>Microelectromechanical systems</subject><subject>Modulus of elasticity</subject><subject>Resonant frequencies</subject><subject>Semiconductor thin films</subject><subject>Signal generators</subject><subject>Silicon</subject><subject>Silicon nitride</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>Thin films</subject><subject>Voltage</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkUtLAzEUhQdR8PkDxE1woaupNzNJJllKfdOi4GMb0jxsZDpTk3RRf72pFQQX4upeDt85cDhFcYhhgDGIs7vx5fhxUAGQAa8Zx3Sj2MGC4BIw5Zv5B9qUDabNdrEb4xsAJoSznWIytnqqOq9Vi-ahn9uQligrQelkg_9Qyfcd6h0aPQxfLlD0rddZ6HwK3liUpr5DzreziFRCOiz7V5vDULKzHKXSIti4X2w51UZ78H33iuery6fhTTm6v74dno9KTSikkjg-0c44UxkQutLCOMxpYzR1hgLRAlzWDGECE0yNAUIAlJgwLUgzMVDvFafr3NzjfWFjkjMftW1b1dl-EWX2MUpyZiZP_iQrzoFgwf4B1qxpWJPB41_gW78IXa4rRQVcAGM4Q3gN6dDHGKyT8-BnKiwlBrlaUX6tKFcryvWK2XO09nhr7Q9fk1ymrj8BhESZyQ</recordid><startdate>20041001</startdate><enddate>20041001</enddate><creator>Wen-Hsien Chuang</creator><creator>Luger, T.</creator><creator>Fettig, R.K.</creator><creator>Ghodssi, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope><scope>F28</scope></search><sort><creationdate>20041001</creationdate><title>Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures</title><author>Wen-Hsien Chuang ; Luger, T. ; Fettig, R.K. ; Ghodssi, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-4f8bcfdfd2d09c2c9df1857dc5fd504c90fc9dd4691415dd04400a9b6c947bd03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Actuators</topic><topic>Cryogenic temperature</topic><topic>Cryogenics</topic><topic>Fracture strength</topic><topic>Mechanical factors</topic><topic>Mechanical properties</topic><topic>Microelectromechanical systems</topic><topic>Modulus of elasticity</topic><topic>Resonant frequencies</topic><topic>Semiconductor thin films</topic><topic>Signal generators</topic><topic>Silicon</topic><topic>Silicon nitride</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>Thin films</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wen-Hsien Chuang</creatorcontrib><creatorcontrib>Luger, T.</creatorcontrib><creatorcontrib>Fettig, R.K.</creatorcontrib><creatorcontrib>Ghodssi, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>Journal of microelectromechanical systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wen-Hsien Chuang</au><au>Luger, T.</au><au>Fettig, R.K.</au><au>Ghodssi, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures</atitle><jtitle>Journal of microelectromechanical systems</jtitle><stitle>JMEMS</stitle><date>2004-10-01</date><risdate>2004</risdate><volume>13</volume><issue>5</issue><spage>870</spage><epage>879</epage><pages>870-879</pages><issn>1057-7157</issn><eissn>1941-0158</eissn><coden>JMIYET</coden><abstract>T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JMEMS.2004.836815</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1057-7157 |
| ispartof | Journal of microelectromechanical systems, 2004-10, Vol.13 (5), p.870-879 |
| issn | 1057-7157 1941-0158 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28367767 |
| source | IEEE Electronic Library (IEL) |
| subjects | Actuators Cryogenic temperature Cryogenics Fracture strength Mechanical factors Mechanical properties Microelectromechanical systems Modulus of elasticity Resonant frequencies Semiconductor thin films Signal generators Silicon Silicon nitride Temperature distribution Temperature measurement Temperature sensors Thin films Voltage |
| title | Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T15%3A51%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanical%20property%20characterization%20of%20LPCVD%20silicon%20nitride%20thin%20films%20at%20cryogenic%20temperatures&rft.jtitle=Journal%20of%20microelectromechanical%20systems&rft.au=Wen-Hsien%20Chuang&rft.date=2004-10-01&rft.volume=13&rft.issue=5&rft.spage=870&rft.epage=879&rft.pages=870-879&rft.issn=1057-7157&rft.eissn=1941-0158&rft.coden=JMIYET&rft_id=info:doi/10.1109/JMEMS.2004.836815&rft_dat=%3Cproquest_RIE%3E2583188401%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=920890661&rft_id=info:pmid/&rft_ieee_id=1341463&rfr_iscdi=true |