Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells
A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633 nm excitation light and both top- and bottom-illumination. Thereby, a Raman cryst...
Gespeichert in:
| Veröffentlicht in: | Solar energy materials and solar cells 2004-01, Vol.81 (1), p.61-71 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 71 |
|---|---|
| container_issue | 1 |
| container_start_page | 61 |
| container_title | Solar energy materials and solar cells |
| container_volume | 81 |
| creator | Droz, C Vallat-Sauvain, E Bailat, J Feitknecht, L Meier, J Shah, A |
| description | A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633
nm excitation light and both top- and bottom-illumination. Thereby, a Raman crystallinity factor indicative of crystalline volume fraction is introduced and applied to the interface regions, i.e. to the mixed amorphous-microcrystalline layers at the top and at the bottom of entire cells. Results are compared with TEM observations for one of the solar cells. Similar Raman and electrical investigations have been conducted also on pin-type μc-Si:H single-junction solar cells. Experimental data show that for all nip and pin μc-Si:H solar cells, the open-circuit voltage linearly decreases as the average of the Raman crystallinity factors for top and bottom interface regions increases. |
| doi_str_mv | 10.1016/j.solmat.2003.07.004 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28355315</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0927024803002113</els_id><sourcerecordid>28355315</sourcerecordid><originalsourceid>FETCH-LOGICAL-c518t-3f756c82cb5b8a5313ead2b3b03648bc886a1190a81b7c1e12939e2fec153d0c3</originalsourceid><addsrcrecordid>eNp9kE2LFDEQhoMoOK7-Aw-56K17K0l_pC-CLK4KCwuLnkO6ulprSKfHJLMy_94eZmFvnury1FtvPUK8V1ArUN31vs5rWHypNYCpoa8Bmhdip2w_VMYM9qXYwaD7CnRjX4s3Oe8BQHem2Ql-oOALrzH_5oMcqfwlivLBLz5KTKdcfAgcuZykj5NcDxQr5IRHLvJxDcX_IslRLoxpfcZJZg6Ma5RbL58kUgj5rXg1-5Dp3dO8Ej9vv_y4-Vbd3X_9fvP5rsJW2VKZuW87tBrHdrS-NcqQn_RoRjBdY0e0tvNKDeCtGntUpPRgBtIzoWrNBGiuxMdL7iGtf46Ui1s4nxv4SOsxO21Nu8W2G9hcwK17zolmd0i8-HRyCtzZq9u7i1d39uqgd5vXbe3DU77P6MOcfETOz7tt02nQZuM-XTjann1kSi4jU0SaOBEWN638_0P_AN99kq4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28355315</pqid></control><display><type>article</type><title>Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Droz, C ; Vallat-Sauvain, E ; Bailat, J ; Feitknecht, L ; Meier, J ; Shah, A</creator><creatorcontrib>Droz, C ; Vallat-Sauvain, E ; Bailat, J ; Feitknecht, L ; Meier, J ; Shah, A</creatorcontrib><description>A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633
nm excitation light and both top- and bottom-illumination. Thereby, a Raman crystallinity factor indicative of crystalline volume fraction is introduced and applied to the interface regions, i.e. to the mixed amorphous-microcrystalline layers at the top and at the bottom of entire cells. Results are compared with TEM observations for one of the solar cells. Similar Raman and electrical investigations have been conducted also on pin-type μc-Si:H single-junction solar cells. Experimental data show that for all nip and pin μc-Si:H solar cells, the open-circuit voltage linearly decreases as the average of the Raman crystallinity factors for top and bottom interface regions increases.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2003.07.004</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Crystallinity ; Energy ; Exact sciences and technology ; Microcrystalline silicon ; Natural energy ; Open-circuit voltage ; Photovoltaic conversion ; Raman spectroscopy ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy</subject><ispartof>Solar energy materials and solar cells, 2004-01, Vol.81 (1), p.61-71</ispartof><rights>2003 Elsevier B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c518t-3f756c82cb5b8a5313ead2b3b03648bc886a1190a81b7c1e12939e2fec153d0c3</citedby><cites>FETCH-LOGICAL-c518t-3f756c82cb5b8a5313ead2b3b03648bc886a1190a81b7c1e12939e2fec153d0c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2003.07.004$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15462023$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Droz, C</creatorcontrib><creatorcontrib>Vallat-Sauvain, E</creatorcontrib><creatorcontrib>Bailat, J</creatorcontrib><creatorcontrib>Feitknecht, L</creatorcontrib><creatorcontrib>Meier, J</creatorcontrib><creatorcontrib>Shah, A</creatorcontrib><title>Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells</title><title>Solar energy materials and solar cells</title><description>A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633
nm excitation light and both top- and bottom-illumination. Thereby, a Raman crystallinity factor indicative of crystalline volume fraction is introduced and applied to the interface regions, i.e. to the mixed amorphous-microcrystalline layers at the top and at the bottom of entire cells. Results are compared with TEM observations for one of the solar cells. Similar Raman and electrical investigations have been conducted also on pin-type μc-Si:H single-junction solar cells. Experimental data show that for all nip and pin μc-Si:H solar cells, the open-circuit voltage linearly decreases as the average of the Raman crystallinity factors for top and bottom interface regions increases.</description><subject>Applied sciences</subject><subject>Crystallinity</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Microcrystalline silicon</subject><subject>Natural energy</subject><subject>Open-circuit voltage</subject><subject>Photovoltaic conversion</subject><subject>Raman spectroscopy</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kE2LFDEQhoMoOK7-Aw-56K17K0l_pC-CLK4KCwuLnkO6ulprSKfHJLMy_94eZmFvnury1FtvPUK8V1ArUN31vs5rWHypNYCpoa8Bmhdip2w_VMYM9qXYwaD7CnRjX4s3Oe8BQHem2Ql-oOALrzH_5oMcqfwlivLBLz5KTKdcfAgcuZykj5NcDxQr5IRHLvJxDcX_IslRLoxpfcZJZg6Ma5RbL58kUgj5rXg1-5Dp3dO8Ej9vv_y4-Vbd3X_9fvP5rsJW2VKZuW87tBrHdrS-NcqQn_RoRjBdY0e0tvNKDeCtGntUpPRgBtIzoWrNBGiuxMdL7iGtf46Ui1s4nxv4SOsxO21Nu8W2G9hcwK17zolmd0i8-HRyCtzZq9u7i1d39uqgd5vXbe3DU77P6MOcfETOz7tt02nQZuM-XTjann1kSi4jU0SaOBEWN638_0P_AN99kq4</recordid><startdate>200401</startdate><enddate>200401</enddate><creator>Droz, C</creator><creator>Vallat-Sauvain, E</creator><creator>Bailat, J</creator><creator>Feitknecht, L</creator><creator>Meier, J</creator><creator>Shah, A</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200401</creationdate><title>Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells</title><author>Droz, C ; Vallat-Sauvain, E ; Bailat, J ; Feitknecht, L ; Meier, J ; Shah, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c518t-3f756c82cb5b8a5313ead2b3b03648bc886a1190a81b7c1e12939e2fec153d0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Crystallinity</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Microcrystalline silicon</topic><topic>Natural energy</topic><topic>Open-circuit voltage</topic><topic>Photovoltaic conversion</topic><topic>Raman spectroscopy</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Droz, C</creatorcontrib><creatorcontrib>Vallat-Sauvain, E</creatorcontrib><creatorcontrib>Bailat, J</creatorcontrib><creatorcontrib>Feitknecht, L</creatorcontrib><creatorcontrib>Meier, J</creatorcontrib><creatorcontrib>Shah, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Droz, C</au><au>Vallat-Sauvain, E</au><au>Bailat, J</au><au>Feitknecht, L</au><au>Meier, J</au><au>Shah, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2004-01</date><risdate>2004</risdate><volume>81</volume><issue>1</issue><spage>61</spage><epage>71</epage><pages>61-71</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633
nm excitation light and both top- and bottom-illumination. Thereby, a Raman crystallinity factor indicative of crystalline volume fraction is introduced and applied to the interface regions, i.e. to the mixed amorphous-microcrystalline layers at the top and at the bottom of entire cells. Results are compared with TEM observations for one of the solar cells. Similar Raman and electrical investigations have been conducted also on pin-type μc-Si:H single-junction solar cells. Experimental data show that for all nip and pin μc-Si:H solar cells, the open-circuit voltage linearly decreases as the average of the Raman crystallinity factors for top and bottom interface regions increases.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2003.07.004</doi><tpages>11</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2004-01, Vol.81 (1), p.61-71 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28355315 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Crystallinity Energy Exact sciences and technology Microcrystalline silicon Natural energy Open-circuit voltage Photovoltaic conversion Raman spectroscopy Solar cells Solar cells. Photoelectrochemical cells Solar energy |
| title | Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T06%3A12%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Relationship%20between%20Raman%20crystallinity%20and%20open-circuit%20voltage%20in%20microcrystalline%20silicon%20solar%20cells&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Droz,%20C&rft.date=2004-01&rft.volume=81&rft.issue=1&rft.spage=61&rft.epage=71&rft.pages=61-71&rft.issn=0927-0248&rft.eissn=1879-3398&rft_id=info:doi/10.1016/j.solmat.2003.07.004&rft_dat=%3Cproquest_cross%3E28355315%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28355315&rft_id=info:pmid/&rft_els_id=S0927024803002113&rfr_iscdi=true |