IIIB-6 channeled substrate buried heterostructure (GaAl) As injection lasers

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Veröffentlicht in:	IEEE transactions on electron devices 1976-11, Vol.23 (11), p.1255-1255
Hauptverfasser:	Kirkby, P.A., Lovelace, D.F., Thompson, G.H.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Distributed feedback devices II-VI semiconductor materials Optical device fabrication Semiconductor lasers Substrates Waveguide lasers Zinc compounds
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doi_str_mv	10.1109/T-ED.1976.18614
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source	IEEE Electronic Library (IEL)
subjects	Distributed feedback devices II-VI semiconductor materials Optical device fabrication Semiconductor lasers Substrates Waveguide lasers Zinc compounds
title	IIIB-6 channeled substrate buried heterostructure (GaAl) As injection lasers
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