Sb and Bi surfactant effects on homo-epitaxy of GaAs on ( [formula omitted]) patterned substrates

Anisotropic lateral growth during GaAs ( 0 0 1 ) epitaxy can have dramatic effects on the evolution of patterned features and surface morphology. Many new opto-electronic devices require growth on patterned or non-ideal surfaces. Controlling lateral growth will be essential for the production of the...

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