Alpha particle simulation of space radiation damage effects in semiconductor devices

We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other...

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Veröffentlicht in:IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.2089-2094
Hauptverfasser: Colerico, C.W., Serreze, H.B., Messenger, S.R., Xapsos, M.A., Burke, E.A.
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container_end_page 2094
container_issue 6
container_start_page 2089
container_title IEEE Transactions on Nuclear Science
container_volume 42
creator Colerico, C.W.
Serreze, H.B.
Messenger, S.R.
Xapsos, M.A.
Burke, E.A.
description We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices.
doi_str_mv 10.1109/23.489257
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subjects Alpha particles
AMERICIUM 241
ANALYTICAL SOLUTION
COMPARATIVE EVALUATIONS
Electrons
Energy loss
EXPERIMENTAL DATA
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Laboratories
NUMERICAL SOLUTION
PHYSICAL RADIATION EFFECTS
PROBABILISTIC ESTIMATION
Protons
Satellites
SEMICONDUCTOR DEVICES
Semiconductor materials
SPACE FLIGHT
Testing
Voltage
title Alpha particle simulation of space radiation damage effects in semiconductor devices
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