Alpha particle simulation of space radiation damage effects in semiconductor devices
We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other...
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Veröffentlicht in: | IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.2089-2094 |
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container_issue | 6 |
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container_title | IEEE Transactions on Nuclear Science |
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creator | Colerico, C.W. Serreze, H.B. Messenger, S.R. Xapsos, M.A. Burke, E.A. |
description | We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices. |
doi_str_mv | 10.1109/23.489257 |
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By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.489257</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Alpha particles ; AMERICIUM 241 ; ANALYTICAL SOLUTION ; COMPARATIVE EVALUATIONS ; Electrons ; Energy loss ; EXPERIMENTAL DATA ; INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS ; Laboratories ; NUMERICAL SOLUTION ; PHYSICAL RADIATION EFFECTS ; PROBABILISTIC ESTIMATION ; Protons ; Satellites ; SEMICONDUCTOR DEVICES ; Semiconductor materials ; SPACE FLIGHT ; Testing ; Voltage</subject><ispartof>IEEE Transactions on Nuclear Science, 1995-12, Vol.42 (6), p.2089-2094</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c303t-b7e5deaf581ddc5dfee220a2f7a96b1f1042c84ac21e24228f3f25934dd2e1403</citedby><cites>FETCH-LOGICAL-c303t-b7e5deaf581ddc5dfee220a2f7a96b1f1042c84ac21e24228f3f25934dd2e1403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/489257$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/489257$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/203735$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Colerico, C.W.</creatorcontrib><creatorcontrib>Serreze, H.B.</creatorcontrib><creatorcontrib>Messenger, S.R.</creatorcontrib><creatorcontrib>Xapsos, M.A.</creatorcontrib><creatorcontrib>Burke, E.A.</creatorcontrib><title>Alpha particle simulation of space radiation damage effects in semiconductor devices</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. 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The results agree well when compared to the results from proton and electron irradiation of the same type of devices.</description><subject>Alpha particles</subject><subject>AMERICIUM 241</subject><subject>ANALYTICAL SOLUTION</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>Electrons</subject><subject>Energy loss</subject><subject>EXPERIMENTAL DATA</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Laboratories</subject><subject>NUMERICAL SOLUTION</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>PROBABILISTIC ESTIMATION</subject><subject>Protons</subject><subject>Satellites</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor materials</subject><subject>SPACE FLIGHT</subject><subject>Testing</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo90E1LAzEQBuAgCtbqwauneBE8bM1nN3ssxS8oeKnnkCYTG9ndrEkq-O9d2eJpmJmH4WUQuqZkQSlpHhhfCNUwWZ-gGZVSVVTW6hTNCKGqakTTnKOLnD_HVkgiZ2i7aoe9wYNJJdgWcA7doTUlxB5Hj_NgLOBkXJhGznTmAzB4D7ZkHHqcoQs29u5gS0zYwXewkC_RmTdthqtjnaP3p8ft-qXavD2_rlebynLCS7WrQTowXirqnJXOAzBGDPO1aZY76ikRzCphLKPABGPKc89kw4VzDKggfI5up7sxl6CzDQXsfkzTj-k0I7zmcjR3kxlS_DpALroL2ULbmh7iIWumuJDNUo3wfoI2xZwTeD2k0Jn0oynRf7_VjOvpt6O9mWwAgH93XP4Cz3l0vg</recordid><startdate>19951201</startdate><enddate>19951201</enddate><creator>Colerico, C.W.</creator><creator>Serreze, H.B.</creator><creator>Messenger, S.R.</creator><creator>Xapsos, M.A.</creator><creator>Burke, E.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19951201</creationdate><title>Alpha particle simulation of space radiation damage effects in semiconductor devices</title><author>Colerico, C.W. ; Serreze, H.B. ; Messenger, S.R. ; Xapsos, M.A. ; Burke, E.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-b7e5deaf581ddc5dfee220a2f7a96b1f1042c84ac21e24228f3f25934dd2e1403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Alpha particles</topic><topic>AMERICIUM 241</topic><topic>ANALYTICAL SOLUTION</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>Electrons</topic><topic>Energy loss</topic><topic>EXPERIMENTAL DATA</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Laboratories</topic><topic>NUMERICAL SOLUTION</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>PROBABILISTIC ESTIMATION</topic><topic>Protons</topic><topic>Satellites</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor materials</topic><topic>SPACE FLIGHT</topic><topic>Testing</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Colerico, C.W.</creatorcontrib><creatorcontrib>Serreze, H.B.</creatorcontrib><creatorcontrib>Messenger, S.R.</creatorcontrib><creatorcontrib>Xapsos, M.A.</creatorcontrib><creatorcontrib>Burke, E.A.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Colerico, C.W.</au><au>Serreze, H.B.</au><au>Messenger, S.R.</au><au>Xapsos, M.A.</au><au>Burke, E.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Alpha particle simulation of space radiation damage effects in semiconductor devices</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1995-12-01</date><risdate>1995</risdate><volume>42</volume><issue>6</issue><spage>2089</spage><epage>2094</epage><pages>2089-2094</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.489257</doi><tpages>6</tpages></addata></record> |
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subjects | Alpha particles AMERICIUM 241 ANALYTICAL SOLUTION COMPARATIVE EVALUATIONS Electrons Energy loss EXPERIMENTAL DATA INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Laboratories NUMERICAL SOLUTION PHYSICAL RADIATION EFFECTS PROBABILISTIC ESTIMATION Protons Satellites SEMICONDUCTOR DEVICES Semiconductor materials SPACE FLIGHT Testing Voltage |
title | Alpha particle simulation of space radiation damage effects in semiconductor devices |
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