Electrical characterization of AlN MIS and MIM structures
Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain hi...
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| Veröffentlicht in: | IEEE transactions on electron devices 2003-05, Vol.50 (5), p.1214-1219 |
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| container_title | IEEE transactions on electron devices |
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| creator | Engelmark, F. Westlinder, J. Iriarte, G.F. Katardjiev, I.V. Olsson, J. |
| description | Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film. The temperature dependence of the capacitance has also been studied. |
| doi_str_mv | 10.1109/TED.2003.813231 |
| format | Article |
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The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film. The temperature dependence of the capacitance has also been studied.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2003.813231</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum compounds ; Aluminum nitride ; Capacitance ; Deposition ; Dielectric constant ; Leakage current ; Leakage currents ; Management information systems ; MIM devices ; MIS devices ; Permittivity ; Physical vapor deposition ; Process engineering ; Sputtering ; Thin films</subject><ispartof>IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1214-1219</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c458t-1e6a10423bef9a9a8039c80a98793609850c695ae11de28dd5e995d1657e9af23</citedby><cites>FETCH-LOGICAL-c458t-1e6a10423bef9a9a8039c80a98793609850c695ae11de28dd5e995d1657e9af23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1210762$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1210762$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Engelmark, F.</creatorcontrib><creatorcontrib>Westlinder, J.</creatorcontrib><creatorcontrib>Iriarte, G.F.</creatorcontrib><creatorcontrib>Katardjiev, I.V.</creatorcontrib><creatorcontrib>Olsson, J.</creatorcontrib><title>Electrical characterization of AlN MIS and MIM structures</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film. The temperature dependence of the capacitance has also been studied.</description><subject>Aluminum compounds</subject><subject>Aluminum nitride</subject><subject>Capacitance</subject><subject>Deposition</subject><subject>Dielectric constant</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>Management information systems</subject><subject>MIM devices</subject><subject>MIS devices</subject><subject>Permittivity</subject><subject>Physical vapor deposition</subject><subject>Process engineering</subject><subject>Sputtering</subject><subject>Thin films</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1rHDEQBmBhYsjlnDqFmyVFSLN3Gn1PeVwutsEfRZxaKNpZssf61pF2C_vXR8cZDC5sV8OgZwYxL2NfgC8AOC5vNz8WgnO5cCCFhCM2A61tjUaZD2zGObgapZMf2aect6U1SokZw01PcUxdDH0V_4YU4kipewxjN-yqoa1W_XV1dfGrCrum1Ksqj2mK45Qon7DjNvSZPj_VOfv9c3O7Pq8vb84u1qvLOirtxhrIBOBKyD_UYsDguMToeEBnURqOTvNoUAcCaEi4ptGEqBsw2hKGVsg5-3bYe5-GfxPl0d91OVLfhx0NU_YChQGr5NvQWQFo-TuglOWbtsDvr0IwFoTW6FShX1_Q7TClXTmMd-VZK2WgoOUBxTTknKj196m7C-nBA_f7EH0J0e9D9IcQy8TpYaIjomctgFsj5H88U5Qb</recordid><startdate>20030501</startdate><enddate>20030501</enddate><creator>Engelmark, F.</creator><creator>Westlinder, J.</creator><creator>Iriarte, G.F.</creator><creator>Katardjiev, I.V.</creator><creator>Olsson, J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>7QQ</scope></search><sort><creationdate>20030501</creationdate><title>Electrical characterization of AlN MIS and MIM structures</title><author>Engelmark, F. ; Westlinder, J. ; Iriarte, G.F. ; Katardjiev, I.V. ; Olsson, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c458t-1e6a10423bef9a9a8039c80a98793609850c695ae11de28dd5e995d1657e9af23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Aluminum compounds</topic><topic>Aluminum nitride</topic><topic>Capacitance</topic><topic>Deposition</topic><topic>Dielectric constant</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>Management information systems</topic><topic>MIM devices</topic><topic>MIS devices</topic><topic>Permittivity</topic><topic>Physical vapor deposition</topic><topic>Process engineering</topic><topic>Sputtering</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Engelmark, F.</creatorcontrib><creatorcontrib>Westlinder, J.</creatorcontrib><creatorcontrib>Iriarte, G.F.</creatorcontrib><creatorcontrib>Katardjiev, I.V.</creatorcontrib><creatorcontrib>Olsson, J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Ceramic Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Engelmark, F.</au><au>Westlinder, J.</au><au>Iriarte, G.F.</au><au>Katardjiev, I.V.</au><au>Olsson, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterization of AlN MIS and MIM structures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2003-05-01</date><risdate>2003</risdate><volume>50</volume><issue>5</issue><spage>1214</spage><epage>1219</epage><pages>1214-1219</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly showing a [110] orientation. Thin AlN films were grown under different process conditions in a physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film. The temperature dependence of the capacitance has also been studied.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2003.813231</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum compounds Aluminum nitride Capacitance Deposition Dielectric constant Leakage current Leakage currents Management information systems MIM devices MIS devices Permittivity Physical vapor deposition Process engineering Sputtering Thin films |
| title | Electrical characterization of AlN MIS and MIM structures |
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