Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's

This paper reports on hot electron (HE) degradation of 0.25-/spl mu/m Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly...

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Veröffentlicht in:	IEEE transactions on electron devices 1998-02, Vol.45 (2), p.366-372
Hauptverfasser:	Borgarino, M., Menozzi, R., Baeyens, Y., Cova, P., Fantini, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Electromagnetic heating Electrons Gallium arsenide Indium gallium arsenide Microwave devices MODFET circuits PHEMTs Radio frequency Stress
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container_end_page	372
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container_title	IEEE transactions on electron devices
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creator	Borgarino, M. Menozzi, R. Baeyens, Y. Cova, P. Fantini, F.
description	This paper reports on hot electron (HE) degradation of 0.25-/spl mu/m Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition.
doi_str_mv	10.1109/16.658668
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The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. 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The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition.</description><subject>Degradation</subject><subject>Electromagnetic heating</subject><subject>Electrons</subject><subject>Gallium arsenide</subject><subject>Indium gallium arsenide</subject><subject>Microwave devices</subject><subject>MODFET circuits</subject><subject>PHEMTs</subject><subject>Radio frequency</subject><subject>Stress</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo90D1PwzAQBmALgUQpDKxMnkAMae04dpyxKv2SikCoiNFy7DMNSpNiuwP_npRULPfe6R7dcAjdUjKilBRjKkaCSyHkGRpQzvOkEJk4RwNCqEwKJtklugrhqxtFlqUD9LFsI4YaTPRtgy18em11rLq-dThuAT9NsW4sfptjs9Vemwi-CrEy4Qgm9UJPwnjV_MWx4Nfl7HnzEK7RhdN1gJtTDtH7fLaZLpP1y2I1nawTwzIWE55TsDkDVnDCJTBeap0C0aURuSulFYZZbq1MQQgnteMkddzYonRcl8JSNkT3_d29b78PEKLaVcFAXesG2kNQqWRMSJp38LGHxrcheHBq76ud9j-KEnV8naJC9a_r7F1vKwD4d6flL7q-aAA</recordid><startdate>19980201</startdate><enddate>19980201</enddate><creator>Borgarino, M.</creator><creator>Menozzi, R.</creator><creator>Baeyens, Y.</creator><creator>Cova, P.</creator><creator>Fantini, F.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980201</creationdate><title>Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's</title><author>Borgarino, M. ; Menozzi, R. ; Baeyens, Y. ; Cova, P. ; Fantini, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-571ed73e395058e35baa2e0abc67fb8d6c3d5dd82e66f8af502f5cd9bf5ab6d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Degradation</topic><topic>Electromagnetic heating</topic><topic>Electrons</topic><topic>Gallium arsenide</topic><topic>Indium gallium arsenide</topic><topic>Microwave devices</topic><topic>MODFET circuits</topic><topic>PHEMTs</topic><topic>Radio frequency</topic><topic>Stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Borgarino, M.</creatorcontrib><creatorcontrib>Menozzi, R.</creatorcontrib><creatorcontrib>Baeyens, Y.</creatorcontrib><creatorcontrib>Cova, P.</creatorcontrib><creatorcontrib>Fantini, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Borgarino, M.</au><au>Menozzi, R.</au><au>Baeyens, Y.</au><au>Cova, P.</au><au>Fantini, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1998-02-01</date><risdate>1998</risdate><volume>45</volume><issue>2</issue><spage>366</spage><epage>372</epage><pages>366-372</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper reports on hot electron (HE) degradation of 0.25-/spl mu/m Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As/GaAs PHEMT's by showing the effects of the hot electron stress on both the dc and rf characteristics. The changes of dc and rf behavior after stress turn out to be strongly correlated. Both can be attributed to a decrease of the threshold voltage yielding different effects on the device gain depending on the bias point chosen for device operation and on the bias circuit adopted: a fixed current bias scheme will minimize the changes induced by the stress. The work also presents a study of the dependence of device degradation on the stress bias condition.</abstract><pub>IEEE</pub><doi>10.1109/16.658668</doi><tpages>7</tpages></addata></record>
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subjects	Degradation Electromagnetic heating Electrons Gallium arsenide Indium gallium arsenide Microwave devices MODFET circuits PHEMTs Radio frequency Stress
title	Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's
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