AlSb-InAs-AlSb p-n-p transistors with low turn-on voltage, narrow bases, and low base resistance

Summary form only given. The authors built and characterized transistors with base widths from 100 nm to as thin as 25 nm. The transistors were grown on GaAs substrates and fabricated into emitter-up double-mesa structures. Driving equivalent current densities requires an emitter-base voltage more t...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2659-2660
Hauptverfasser:	Pekarik, J.J., Kroemer, H., English, J.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Doping Electrons Gold Indium gallium arsenide Indium phosphide Low voltage Molecular beam epitaxial growth Scattering Temperature distribution
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