Highly efficient double-doped heterojunction FET's for battery-operated portable power applications
Microwave power performance of double-doped AlGaAs-InGaAs-AlGaAs heterojunction field-effect transistors (HJFET's) operated at a drain bias of 3 V is described. The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to...
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| Veröffentlicht in: | IEEE electron device letters 1994-07, Vol.15 (7), p.248-250, Article 248 |
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| container_title | IEEE electron device letters |
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| creator | Inosako, M. Matsunaga, K. Okamoto, Y. Kuzuhara, M. |
| description | Microwave power performance of double-doped AlGaAs-InGaAs-AlGaAs heterojunction field-effect transistors (HJFET's) operated at a drain bias of 3 V is described. The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to-drain breakdown voltage of 10 V. Power performance for a 14 mm gate periphery device demonstrated a maximum output power of 1.7 W with a 66% power-added efficiency (PAE) at 900 MHz. When the device was tuned for a maximum PAE, it delivered a 71% PAE with an output power of 1.2 W. The results indicate that the developed HJFET has great potential for 3 V battery-operated portable power applications. |
| doi_str_mv | 10.1109/55.294085 |
| format | Article |
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The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to-drain breakdown voltage of 10 V. Power performance for a 14 mm gate periphery device demonstrated a maximum output power of 1.7 W with a 66% power-added efficiency (PAE) at 900 MHz. When the device was tuned for a maximum PAE, it delivered a 71% PAE with an output power of 1.2 W. The results indicate that the developed HJFET has great potential for 3 V battery-operated portable power applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.294085</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electrical resistance measurement ; Electronics ; Exact sciences and technology ; Gain measurement ; Gallium arsenide ; Heterojunctions ; Impedance matching ; Microwave FETs ; Power generation ; Power measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to-drain breakdown voltage of 10 V. Power performance for a 14 mm gate periphery device demonstrated a maximum output power of 1.7 W with a 66% power-added efficiency (PAE) at 900 MHz. When the device was tuned for a maximum PAE, it delivered a 71% PAE with an output power of 1.2 W. The results indicate that the developed HJFET has great potential for 3 V battery-operated portable power applications.</description><subject>Applied sciences</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>Gallium arsenide</subject><subject>Heterojunctions</subject><subject>Impedance matching</subject><subject>Microwave FETs</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkUFLxDAQRoMouK4evHrqQRQPXZMmaZqjiLrCghc9l9l0qpHa1CSL7L832mUPIuhpBuZ9j2GGkGNGZ4xRfSnlrNCCVnKHTJiUVU5lyXfJhCrBcs5ouU8OQnillAmhxISYuX1-6dYZtq01FvuYNW617DBv3IBN9oIRvXtd9SZa12e3N4_nIWudz5YQ02SdJ8pDTOTgfIQUTM0H-gyGobMGvlLhkOy10AU82tQpeUqi63m-eLi7v75a5IaXVcxLnZakjGshGDSAWDDNC80qVWillNSIZokNaFYwvtSibIxirYJGlBRLaPiUnI3ewbv3FYZYv9lgsOugR7cKdVHpQlWS_gPkidXyb7AUaUEqEngxgsa7EDy29eDtG_h1zWj99Zhaynp8TGJPN1IIBrrWQ29s2AY4p3rELn8ojY3fB40ebPer-GRMWETc-jbDT8uapMk</recordid><startdate>19940701</startdate><enddate>19940701</enddate><creator>Inosako, M.</creator><creator>Matsunaga, K.</creator><creator>Okamoto, Y.</creator><creator>Kuzuhara, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940701</creationdate><title>Highly efficient double-doped heterojunction FET's for battery-operated portable power applications</title><author>Inosako, M. ; Matsunaga, K. ; Okamoto, Y. ; Kuzuhara, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-690740139441adaee2193291872977759eecbeda91213b946dc71f7ad460e6ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>Gallium arsenide</topic><topic>Heterojunctions</topic><topic>Impedance matching</topic><topic>Microwave FETs</topic><topic>Power generation</topic><topic>Power measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transconductance</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Inosako, M.</creatorcontrib><creatorcontrib>Matsunaga, K.</creatorcontrib><creatorcontrib>Okamoto, Y.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Inosako, M.</au><au>Matsunaga, K.</au><au>Okamoto, Y.</au><au>Kuzuhara, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly efficient double-doped heterojunction FET's for battery-operated portable power applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1994-07-01</date><risdate>1994</risdate><volume>15</volume><issue>7</issue><spage>248</spage><epage>250</epage><pages>248-250</pages><artnum>248</artnum><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Microwave power performance of double-doped AlGaAs-InGaAs-AlGaAs heterojunction field-effect transistors (HJFET's) operated at a drain bias of 3 V is described. The fabricated 1.0 μm gate-length HJFET exhibited a maximum drain current of 500 mA/mm, a transconductance of 300 mS/mm, and a gate-to-drain breakdown voltage of 10 V. Power performance for a 14 mm gate periphery device demonstrated a maximum output power of 1.7 W with a 66% power-added efficiency (PAE) at 900 MHz. When the device was tuned for a maximum PAE, it delivered a 71% PAE with an output power of 1.2 W. The results indicate that the developed HJFET has great potential for 3 V battery-operated portable power applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.294085</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1994-07, Vol.15 (7), p.248-250, Article 248 |
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| language | eng |
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| source | IEEE Xplore |
| subjects | Applied sciences Electrical resistance measurement Electronics Exact sciences and technology Gain measurement Gallium arsenide Heterojunctions Impedance matching Microwave FETs Power generation Power measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transconductance Transistors Voltage |
| title | Highly efficient double-doped heterojunction FET's for battery-operated portable power applications |
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