High speed current switching of homogeneous YBaCuO film between superconducting and resistive states
Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistan...
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Veröffentlicht in: | IEEE transactions on applied superconductivity 1995-06, Vol.5 (2), p.3042-3045 |
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container_title | IEEE transactions on applied superconductivity |
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creator | Karasik, B.S. Milostnaya, I.I. Zorin, M.A. Elantev, A.I. Gol'tsman, G.N. Gershenzon, E.M. |
description | Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.< > |
doi_str_mv | 10.1109/77.403233 |
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A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.< ></description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/77.403233</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrons ; High temperature superconductors ; Identity-based encryption ; Microwave technology ; Optical attenuators ; Optical films ; Phonons ; Substrates ; Superconducting films ; Yttrium barium copper oxide</subject><ispartof>IEEE transactions on applied superconductivity, 1995-06, Vol.5 (2), p.3042-3045</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c277t-8d4467dfc099a533e54044ec32ad8cd50532394c89c69d15ad96e129c6d17dfa3</citedby><cites>FETCH-LOGICAL-c277t-8d4467dfc099a533e54044ec32ad8cd50532394c89c69d15ad96e129c6d17dfa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/403233$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/403233$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Karasik, B.S.</creatorcontrib><creatorcontrib>Milostnaya, I.I.</creatorcontrib><creatorcontrib>Zorin, M.A.</creatorcontrib><creatorcontrib>Elantev, A.I.</creatorcontrib><creatorcontrib>Gol'tsman, G.N.</creatorcontrib><creatorcontrib>Gershenzon, E.M.</creatorcontrib><title>High speed current switching of homogeneous YBaCuO film between superconducting and resistive states</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.< ></description><subject>Electrons</subject><subject>High temperature superconductors</subject><subject>Identity-based encryption</subject><subject>Microwave technology</subject><subject>Optical attenuators</subject><subject>Optical films</subject><subject>Phonons</subject><subject>Substrates</subject><subject>Superconducting films</subject><subject>Yttrium barium copper oxide</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9kDlPAzEQhS0EEiFQ0FK5QqJY8LlHCREQpEhpoKBaGXs2MdoLj5eIf8-GjahmRvO90ZtHyCVnt5yz4i7LbhWTQsojMuNa54nQXB-PPdM8yYWQp-QM8ZMxrnKlZ8Qt_WZLsQdw1A4hQBsp7ny0W99uaFfRbdd0G2ihG5C-P5jFsKaVrxv6AXEH0FIcegi2a91g415iWkcDoMfov4FiNBHwnJxUpka4ONQ5eXt6fF0sk9X6-WVxv0qsyLKY5E6pNHOVZUVhtJSgFVMKrBTG5dZppsfHCmXzwqaF49q4IgUuxsnxUWbknFxPd_vQfQ2AsWw8Wqhr8-e_FLkUqUzTEbyZQBs6xABV2QffmPBTclbucyyzrJxyHNmrifUA8M8dlr96vW6r</recordid><startdate>19950601</startdate><enddate>19950601</enddate><creator>Karasik, B.S.</creator><creator>Milostnaya, I.I.</creator><creator>Zorin, M.A.</creator><creator>Elantev, A.I.</creator><creator>Gol'tsman, G.N.</creator><creator>Gershenzon, E.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19950601</creationdate><title>High speed current switching of homogeneous YBaCuO film between superconducting and resistive states</title><author>Karasik, B.S. ; Milostnaya, I.I. ; Zorin, M.A. ; Elantev, A.I. ; Gol'tsman, G.N. ; Gershenzon, E.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c277t-8d4467dfc099a533e54044ec32ad8cd50532394c89c69d15ad96e129c6d17dfa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Electrons</topic><topic>High temperature superconductors</topic><topic>Identity-based encryption</topic><topic>Microwave technology</topic><topic>Optical attenuators</topic><topic>Optical films</topic><topic>Phonons</topic><topic>Substrates</topic><topic>Superconducting films</topic><topic>Yttrium barium copper oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karasik, B.S.</creatorcontrib><creatorcontrib>Milostnaya, I.I.</creatorcontrib><creatorcontrib>Zorin, M.A.</creatorcontrib><creatorcontrib>Elantev, A.I.</creatorcontrib><creatorcontrib>Gol'tsman, G.N.</creatorcontrib><creatorcontrib>Gershenzon, E.M.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Karasik, B.S.</au><au>Milostnaya, I.I.</au><au>Zorin, M.A.</au><au>Elantev, A.I.</au><au>Gol'tsman, G.N.</au><au>Gershenzon, E.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High speed current switching of homogeneous YBaCuO film between superconducting and resistive states</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>1995-06-01</date><risdate>1995</risdate><volume>5</volume><issue>2</issue><spage>3042</spage><epage>3045</epage><pages>3042-3045</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.< ></abstract><pub>IEEE</pub><doi>10.1109/77.403233</doi><tpages>4</tpages></addata></record> |
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subjects | Electrons High temperature superconductors Identity-based encryption Microwave technology Optical attenuators Optical films Phonons Substrates Superconducting films Yttrium barium copper oxide |
title | High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
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