Giant tunneling electroresistance in a 2D bilayer-In2Se3-based out-of-plane ferroelectric tunnel junction

Ferroelectric tunnel junctions (FTJs) have great potential in nonvolatile memory devices and have been extensively studied in recent years. Compared with conventional FTJs based on perovskite-type oxide materials as the barrier layer, two-dimensional (2D) van der Waals ferroelectric materials are ad...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2023-07, Vol.25 (27), p.18158-18165
Hauptverfasser:	Han, Ziqi, Chun-Sheng, Liu, Zheng, Xiaohong, Zhang, Lei
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferroelectricity Barrier layers Bilayers Charge transfer Dipoles Electron transport Ferroelectric materials Graphene Green's functions Mathematical analysis Memory devices Perovskites Thickness Transport properties Tunnel construction Tunnel junctions
Online-Zugang:	Volltext
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