High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications

We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold...

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Veröffentlicht in:IEEE photonics technology letters 1995-05, Vol.7 (5), p.447-448
Hauptverfasser: Bo Lu, Wen-Lin Luo, Hains, C., Cheng, J., Schneider, R.P., Choquette, R.P., Lear, K.L., Kilcoyne, S.P., Zolper, J.C.
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container_end_page 448
container_issue 5
container_start_page 447
container_title IEEE photonics technology letters
container_volume 7
creator Bo Lu
Wen-Lin Luo
Hains, C.
Cheng, J.
Schneider, R.P.
Choquette, R.P.
Lear, K.L.
Kilcoyne, S.P.
Zolper, J.C.
description We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold voltage (V/sub th/=1.75 V) and current (I/sub th/=1.7 mA), and low power dissipation (9 mW at P/sub out/=2.0 mW) for a 20-μm-diameter device.
doi_str_mv 10.1109/68.384505
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28322041</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>384505</ieee_id><sourcerecordid>28322041</sourcerecordid><originalsourceid>FETCH-LOGICAL-c341t-ce052ec74939d2d99307bb18362118b4104ab5e58e1616a77a9d108420b2dac63</originalsourceid><addsrcrecordid>eNpFkDFPwzAQhS0EEqUwsDJ5QEgMKT7bSZwRVUCRKrHAHDnOpTVKnWCnRfn3uAqC6Z7uvveke4RcA1sAsOIhUwuhZMrSEzKDQkLCIJenUbOoAUR6Ti5C-GQMZCrkjNiV3WwTbBprLDozUu1quj3u-u4bPT2gH6zRbWL0wQ4jDXvfaIMJ7uwwWLehrQ4RqzHYjcOaNp2nxo_dBp01VPd9G92D7Vy4JGeNbgNe_c45-Xh-el-ukvXby-vycZ0YIWFIDLKUo8llIYqa10UhWF5VoETGAVQl4yO6SjFVCBlkOs91UQNTkrOK19pkYk7uptzed197DEO5s8Fg22qH3T6UXAnOYxsRvJ9A47sQPDZl7-1O-7EEVh7LLDNVTmVG9vY3VIfYRuO1Mzb8GUQKvBB5xG4mzCLi_3XK-AH27nyI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28322041</pqid></control><display><type>article</type><title>High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications</title><source>IEEE Electronic Library (IEL)</source><creator>Bo Lu ; Wen-Lin Luo ; Hains, C. ; Cheng, J. ; Schneider, R.P. ; Choquette, R.P. ; Lear, K.L. ; Kilcoyne, S.P. ; Zolper, J.C.</creator><creatorcontrib>Bo Lu ; Wen-Lin Luo ; Hains, C. ; Cheng, J. ; Schneider, R.P. ; Choquette, R.P. ; Lear, K.L. ; Kilcoyne, S.P. ; Zolper, J.C.</creatorcontrib><description>We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold voltage (V/sub th/=1.75 V) and current (I/sub th/=1.7 mA), and low power dissipation (9 mW at P/sub out/=2.0 mW) for a 20-μm-diameter device.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.384505</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Cryogenics ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Lasers ; Optical design ; Optics ; Physics ; Power conversion ; Power dissipation ; Power generation ; Power lasers ; Semiconductor lasers; laser diodes ; Surface emitting lasers ; Temperature ; Threshold voltage ; Vertical cavity surface emitting lasers</subject><ispartof>IEEE photonics technology letters, 1995-05, Vol.7 (5), p.447-448</ispartof><rights>1995 INIST-CNRS</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c341t-ce052ec74939d2d99307bb18362118b4104ab5e58e1616a77a9d108420b2dac63</citedby><cites>FETCH-LOGICAL-c341t-ce052ec74939d2d99307bb18362118b4104ab5e58e1616a77a9d108420b2dac63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/384505$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/384505$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3512937$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bo Lu</creatorcontrib><creatorcontrib>Wen-Lin Luo</creatorcontrib><creatorcontrib>Hains, C.</creatorcontrib><creatorcontrib>Cheng, J.</creatorcontrib><creatorcontrib>Schneider, R.P.</creatorcontrib><creatorcontrib>Choquette, R.P.</creatorcontrib><creatorcontrib>Lear, K.L.</creatorcontrib><creatorcontrib>Kilcoyne, S.P.</creatorcontrib><creatorcontrib>Zolper, J.C.</creatorcontrib><title>High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold voltage (V/sub th/=1.75 V) and current (I/sub th/=1.7 mA), and low power dissipation (9 mW at P/sub out/=2.0 mW) for a 20-μm-diameter device.</description><subject>Cryogenics</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Lasers</subject><subject>Optical design</subject><subject>Optics</subject><subject>Physics</subject><subject>Power conversion</subject><subject>Power dissipation</subject><subject>Power generation</subject><subject>Power lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Surface emitting lasers</subject><subject>Temperature</subject><subject>Threshold voltage</subject><subject>Vertical cavity surface emitting lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFkDFPwzAQhS0EEqUwsDJ5QEgMKT7bSZwRVUCRKrHAHDnOpTVKnWCnRfn3uAqC6Z7uvveke4RcA1sAsOIhUwuhZMrSEzKDQkLCIJenUbOoAUR6Ti5C-GQMZCrkjNiV3WwTbBprLDozUu1quj3u-u4bPT2gH6zRbWL0wQ4jDXvfaIMJ7uwwWLehrQ4RqzHYjcOaNp2nxo_dBp01VPd9G92D7Vy4JGeNbgNe_c45-Xh-el-ukvXby-vycZ0YIWFIDLKUo8llIYqa10UhWF5VoETGAVQl4yO6SjFVCBlkOs91UQNTkrOK19pkYk7uptzed197DEO5s8Fg22qH3T6UXAnOYxsRvJ9A47sQPDZl7-1O-7EEVh7LLDNVTmVG9vY3VIfYRuO1Mzb8GUQKvBB5xG4mzCLi_3XK-AH27nyI</recordid><startdate>19950501</startdate><enddate>19950501</enddate><creator>Bo Lu</creator><creator>Wen-Lin Luo</creator><creator>Hains, C.</creator><creator>Cheng, J.</creator><creator>Schneider, R.P.</creator><creator>Choquette, R.P.</creator><creator>Lear, K.L.</creator><creator>Kilcoyne, S.P.</creator><creator>Zolper, J.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19950501</creationdate><title>High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications</title><author>Bo Lu ; Wen-Lin Luo ; Hains, C. ; Cheng, J. ; Schneider, R.P. ; Choquette, R.P. ; Lear, K.L. ; Kilcoyne, S.P. ; Zolper, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-ce052ec74939d2d99307bb18362118b4104ab5e58e1616a77a9d108420b2dac63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Cryogenics</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Lasers</topic><topic>Optical design</topic><topic>Optics</topic><topic>Physics</topic><topic>Power conversion</topic><topic>Power dissipation</topic><topic>Power generation</topic><topic>Power lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Surface emitting lasers</topic><topic>Temperature</topic><topic>Threshold voltage</topic><topic>Vertical cavity surface emitting lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Bo Lu</creatorcontrib><creatorcontrib>Wen-Lin Luo</creatorcontrib><creatorcontrib>Hains, C.</creatorcontrib><creatorcontrib>Cheng, J.</creatorcontrib><creatorcontrib>Schneider, R.P.</creatorcontrib><creatorcontrib>Choquette, R.P.</creatorcontrib><creatorcontrib>Lear, K.L.</creatorcontrib><creatorcontrib>Kilcoyne, S.P.</creatorcontrib><creatorcontrib>Zolper, J.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bo Lu</au><au>Wen-Lin Luo</au><au>Hains, C.</au><au>Cheng, J.</au><au>Schneider, R.P.</au><au>Choquette, R.P.</au><au>Lear, K.L.</au><au>Kilcoyne, S.P.</au><au>Zolper, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1995-05-01</date><risdate>1995</risdate><volume>7</volume><issue>5</issue><spage>447</spage><epage>448</epage><pages>447-448</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold voltage (V/sub th/=1.75 V) and current (I/sub th/=1.7 mA), and low power dissipation (9 mW at P/sub out/=2.0 mW) for a 20-μm-diameter device.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.384505</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 1995-05, Vol.7 (5), p.447-448
issn 1041-1135
1941-0174
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recordid cdi_proquest_miscellaneous_28322041
source IEEE Electronic Library (IEL)
subjects Cryogenics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optical design
Optics
Physics
Power conversion
Power dissipation
Power generation
Power lasers
Semiconductor lasers
laser diodes
Surface emitting lasers
Temperature
Threshold voltage
Vertical cavity surface emitting lasers
title High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T09%3A51%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-efficiency%20and%20high-power%20vertical-cavity%20surface-emitting%20laser%20designed%20for%20cryogenic%20applications&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Bo%20Lu&rft.date=1995-05-01&rft.volume=7&rft.issue=5&rft.spage=447&rft.epage=448&rft.pages=447-448&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.384505&rft_dat=%3Cproquest_RIE%3E28322041%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28322041&rft_id=info:pmid/&rft_ieee_id=384505&rfr_iscdi=true