Hafnium tantalum nitride resistive sea for the silicon diode-array camera tube target
A new material has been developed as a resistive sea for the silicon diode-array camera tube target. The material is prepared by reactive sputtering of a hafnium tantalum cathode in a nitrogen atmosphere. By adjusting the relative amounts of hafnium and tantalum in the cathode or by changing the spu...
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| Veröffentlicht in: | IEEE transactions on electron devices 1973-12, Vol.20 (12), p.1147-1149 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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