Optical properties of Mn-doped InAs and InMnAs epitaxial films
The optical properties of In 1− x Mn x As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5 eV to determine their electronic structure. For single-phase InMnAs alloy thin films ( x
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2004-02, Vol.344 (1), p.379-384 |
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| container_title | Physica. B, Condensed matter |
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| creator | Chiu, P.T. Blattner, A.J. May, S.J. Wessels, B.W. |
| description | The optical properties of In
1−
x
Mn
x
As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5
eV to determine their electronic structure. For single-phase InMnAs alloy thin films (
x |
| doi_str_mv | 10.1016/j.physb.2003.10.029 |
| format | Article |
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1−
x
Mn
x
As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5
eV to determine their electronic structure. For single-phase InMnAs alloy thin films (
x<0.01–0.12), a band gap of 0.334
eV, 23
meV lower than InAs, is observed at 295
K. The decrease is attributed to the formation of a shallow manganese impurity band. Reflectance peaks arising from higher lying L-point transitions between the valence band and conduction band are observed in InMnAs thin films. The energy of these transitions decreases with increasing manganese concentration. This demonstrates that the manganese impurity band broadens at the L-point. A broad featureless absorption band was observed between 0.05 and 0.30
eV.This extrinsic absorption band is attributed to light hole to heavy hole inter-valence band transitions. The measured low-frequency optical conductivity is in good agreement with that determined from electrical resistivity measurements.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2003.10.029</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Diluted magnetic semiconductors ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Iii-v semiconductors ; Indium manganese arsenide ; Infrared spectroscopy ; Multilayers ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Spintronics ; Thin films and multilayers ; Visible reflectance</subject><ispartof>Physica. B, Condensed matter, 2004-02, Vol.344 (1), p.379-384</ispartof><rights>2003 Elsevier B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-98227333307513ec96cfe3191f1e7b05fbe7dd6bbdadb8e1412fa42fbdff792f3</citedby><cites>FETCH-LOGICAL-c428t-98227333307513ec96cfe3191f1e7b05fbe7dd6bbdadb8e1412fa42fbdff792f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2003.10.029$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15474673$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chiu, P.T.</creatorcontrib><creatorcontrib>Blattner, A.J.</creatorcontrib><creatorcontrib>May, S.J.</creatorcontrib><creatorcontrib>Wessels, B.W.</creatorcontrib><title>Optical properties of Mn-doped InAs and InMnAs epitaxial films</title><title>Physica. B, Condensed matter</title><description>The optical properties of In
1−
x
Mn
x
As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5
eV to determine their electronic structure. For single-phase InMnAs alloy thin films (
x<0.01–0.12), a band gap of 0.334
eV, 23
meV lower than InAs, is observed at 295
K. The decrease is attributed to the formation of a shallow manganese impurity band. Reflectance peaks arising from higher lying L-point transitions between the valence band and conduction band are observed in InMnAs thin films. The energy of these transitions decreases with increasing manganese concentration. This demonstrates that the manganese impurity band broadens at the L-point. A broad featureless absorption band was observed between 0.05 and 0.30
eV.This extrinsic absorption band is attributed to light hole to heavy hole inter-valence band transitions. The measured low-frequency optical conductivity is in good agreement with that determined from electrical resistivity measurements.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diluted magnetic semiconductors</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Indium manganese arsenide</subject><subject>Infrared spectroscopy</subject><subject>Multilayers</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Spintronics</subject><subject>Thin films and multilayers</subject><subject>Visible reflectance</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kE1PwzAMhiMEEmPwC7j0AreWfLVpDyBN04BJm3aBc5QmjsjUtSXpEPv3pGwSN3yxY72vYz8I3RKcEUyKh23WfxxCnVGMWexkmFZnaEJKwVJKWH6OJriiJOU5LS7RVQhbHIMIMkFPm35wWjVJ77se_OAgJJ1N1m1q4tsky3YWEtWOxXosoXeD-nbRYF2zC9fowqomwM0pT9H78-Jt_pquNi_L-WyVak7LIa1KSgWLgUVOGOiq0BYYqYglIGqc2xqEMUVdG2XqEggn1CpObW2sFRW1bIruj3Pjmp97CIPcuaChaVQL3T5IWjKcc46jkB2F2ncheLCy926n_EESLEdWcit_WcmR1diMrKLr7jRehQjDetVqF_6sORe8iAdM0eNRB_HWLwdeBu2g1WCcBz1I07l___kB8mOADg</recordid><startdate>20040215</startdate><enddate>20040215</enddate><creator>Chiu, P.T.</creator><creator>Blattner, A.J.</creator><creator>May, S.J.</creator><creator>Wessels, B.W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20040215</creationdate><title>Optical properties of Mn-doped InAs and InMnAs epitaxial films</title><author>Chiu, P.T. ; Blattner, A.J. ; May, S.J. ; Wessels, B.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-98227333307513ec96cfe3191f1e7b05fbe7dd6bbdadb8e1412fa42fbdff792f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diluted magnetic semiconductors</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Indium manganese arsenide</topic><topic>Infrared spectroscopy</topic><topic>Multilayers</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Spintronics</topic><topic>Thin films and multilayers</topic><topic>Visible reflectance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chiu, P.T.</creatorcontrib><creatorcontrib>Blattner, A.J.</creatorcontrib><creatorcontrib>May, S.J.</creatorcontrib><creatorcontrib>Wessels, B.W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chiu, P.T.</au><au>Blattner, A.J.</au><au>May, S.J.</au><au>Wessels, B.W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of Mn-doped InAs and InMnAs epitaxial films</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2004-02-15</date><risdate>2004</risdate><volume>344</volume><issue>1</issue><spage>379</spage><epage>384</epage><pages>379-384</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>The optical properties of In
1−
x
Mn
x
As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5
eV to determine their electronic structure. For single-phase InMnAs alloy thin films (
x<0.01–0.12), a band gap of 0.334
eV, 23
meV lower than InAs, is observed at 295
K. The decrease is attributed to the formation of a shallow manganese impurity band. Reflectance peaks arising from higher lying L-point transitions between the valence band and conduction band are observed in InMnAs thin films. The energy of these transitions decreases with increasing manganese concentration. This demonstrates that the manganese impurity band broadens at the L-point. A broad featureless absorption band was observed between 0.05 and 0.30
eV.This extrinsic absorption band is attributed to light hole to heavy hole inter-valence band transitions. The measured low-frequency optical conductivity is in good agreement with that determined from electrical resistivity measurements.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2003.10.029</doi><tpages>6</tpages></addata></record> |
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| ispartof | Physica. B, Condensed matter, 2004-02, Vol.344 (1), p.379-384 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Diluted magnetic semiconductors Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Indium manganese arsenide Infrared spectroscopy Multilayers Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Spintronics Thin films and multilayers Visible reflectance |
| title | Optical properties of Mn-doped InAs and InMnAs epitaxial films |
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