Optical properties of Mn-doped InAs and InMnAs epitaxial films

The optical properties of In 1− x Mn x As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5 eV to determine their electronic structure. For single-phase InMnAs alloy thin films ( x

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Bibliographische Detailangaben
Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2004-02, Vol.344 (1), p.379-384
Hauptverfasser:	Chiu, P.T., Blattner, A.J., May, S.J., Wessels, B.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Diluted magnetic semiconductors Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Indium manganese arsenide Infrared spectroscopy Multilayers Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Spintronics Thin films and multilayers Visible reflectance
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Beschreibung
Zusammenfassung:	The optical properties of In 1− x Mn x As ferromagnetic semiconductors have been measured over the spectral range of 0.05–3.5 eV to determine their electronic structure. For single-phase InMnAs alloy thin films ( x
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2003.10.029