High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a...

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Veröffentlicht in:	IEEE photonics technology letters 1997-05, Vol.9 (5), p.654-656
Hauptverfasser:	Wohlmuth, W.A., Fay, P., Vaccaro, K., Martin, E.A., Adesida, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Bandwidth Dark current Degradation Electrodes Indium compounds Indium gallium arsenide Molecular beam epitaxial growth Photodetectors Schottky barriers
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