Photoluminescence and absorption in multi-energy Ge implanted type III silica

Silica samples were implanted at multiple energies with Ge ions, which resulted in an implanted layer, ∼2.4μm in length starting ∼0.8μm below the surface and in which the atomic percent of Ge ranged from ∼0.02% to ∼0.1%. Optical absorption was measured from 2.7 to 6.4eV and in all spectra a local ma...

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Veröffentlicht in:	Journal of non-crystalline solids 2004-10, Vol.345-346 (Complete), p.284-292
Hauptverfasser:	Magruder, R.H., Weeks, R.A., Weller, R.A., Galyon, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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