Feedback Effects in the GaAs MESFET Model (Letters)

Feedback Effects in the GaAs MESFET Model (Letters)

GaAs MESFET models correctly predict a positive feedback conductance. The effect of common-lead inductance on Y/sub 12/ rising computer modeling techniques is examined. Experimental data are also included which indicate that the common-lead inductance of about 0.06 nH cannot be omitted from the mode...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 1976-06, Vol.24 (6), p.383-385
1. Verfasser: Vendelin, G.D.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Feedback
Frequency
Gallium arsenide
Indium tin oxide
Inductance
MESFETs
Microwave devices
Predictive models
Schottky diodes
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:GaAs MESFET models correctly predict a positive feedback conductance. The effect of common-lead inductance on Y/sub 12/ rising computer modeling techniques is examined. Experimental data are also included which indicate that the common-lead inductance of about 0.06 nH cannot be omitted from the model in order to accurately predict the feedback conductance.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1976.1128860